The dynamic self-heating (SH) instability of a-InGaZnO (a-IGZO) thin-film transistors (TFTs) was systematically investigated under static drain bias and pulsed gate voltage. The a-IGZO TFTs exhibited three distinct degradation stages, including a slightly positive shift of threshold voltage (ΔV_th), then a gradually negative ΔV_th, and finally an accelerated negative shift leading to normally-on characteristics. The underlying mechanisms were clarified to be SH-enhanced positive bias stress (PBS) instability, SH-generated donor defects, and the donor-populated central channel, respectively. By changing the duty ratio, frequency, peak, and base periods of gate pulses. The competition between heating and cooling periods was found to dominate the behavior and degree of dynamic SH degradations, suggesting a feasible instability-relieving method by sophisticatedly adjusting the dynamic operating conditions.

在静态漏极偏压和脉冲栅极电压下系统地研究了 a-InGaZnO (a-IGZO) 薄膜晶体管 (TFT) 的动态自热 (SH) 不稳定性。a-IGZO TFT 表现出三个不同的退化阶段，包括阈值电压（Δ V _th）的轻微正偏移，然后是逐渐负的 Δ V _th，最后是导致常开特性的加速负移。其潜在机制分别被阐明为 SH 增强的正偏置应力 (PBS) 不稳定性、SH 产生的供体缺陷和供体聚集的中央通道。通过改变栅极脉冲的占空比、频率、峰值和基极周期。发现加热和冷却周期之间的竞争主导了动态 SH 退化的行为和程度，这表明通过复杂地调整动态操作条件来缓解不稳定的方法是可行的。