Atomically thin two-dimensional materials—including transitional metal dichalcogenides and hexagonal boron nitride—can exhibit non-volatile resistive switching. This switching behaviour could be used to create analogue switches for use in high-frequency communication, but has so far been limited to frequencies relevant to the fifth generation of wireless communication technology. Here we show that non-volatile switches made from monolayer molybdenum disulfide in a metal–insulator–metal structure can operate at frequencies corresponding to the sixth-generation communication band (around 100–500 GHz). The switches exhibit low insertion loss in the ON state and high isolation in the OFF state up to 480 GHz with sub-nanosecond pulse switching. We obtain the eye diagrams and constellation diagrams at various data transmission rates and modulations to evaluate the device performance, including real-time data communication up to 100 Gbit s⁻¹ at a carrier frequency of 320 GHz, with a low bit error rate and high signal-to-noise ratio.

原子级薄的二维材料——包括过渡金属二硫属化物和六方氮化硼——可以表现出非易失性电阻开关。这种开关行为可用于创建用于高频通信的模拟开关，但迄今为止仅限于与第五代无线通信技术相关的频率。在这里，我们展示了由金属-绝缘体-金属结构中的单层二硫化钼制成的非易失性开关可以在对应于第六代通信频段（约 100-500 GHz）的频率下工作。这些开关在开启状态下表现出低插入损耗，在高达 480 GHz 的关闭状态下表现出高隔离度，具有亚纳秒脉冲开关。^-1，载波频率为 320 GHz，误码率低，信噪比高。