During the last few decades, photonic integrated circuits have increased dramatically, facilitating many high-performance applications, such as on-chip sensing, data processing, and inter-chip communications. The currently dominating material platforms (i.e., silicon, silicon nitride, lithium niobate, and indium phosphide), which have exhibited great application successes, however, suffer from their own disadvantages, such as the indirect bandgap of silicon for efficient light emission, and the compatibility challenges of indium phosphide with the silicon industry. Here, we report a new dielectric platform using nanostructured bulk van der Waals materials. On-chip light propagation, emission, and detection are demonstrated by taking advantage of different van der Waals materials. Low-loss passive waveguides with MoS₂ and on-chip light sources and photodetectors with InSe have been realised. Our proof-of-concept demonstration of passive and active on-chip photonic components endorses van der Waals materials for offering a new dielectric platform with a large material-selection degree of freedom and unique properties toward close-to-atomic scale manufacture of on-chip photonic and optoelectronic devices.

中文翻译：

---

具有范德华材料介电平台的片上光子学和光电子学

在过去的几十年中，光子集成电路急剧增长，促进了许多高性能应用，例如片上传感、数据处理和芯片间通信。目前占主导地位的材料平台（即硅、氮化硅、铌酸锂和磷化铟）在应用上取得了巨大的成功，但也有其自身的缺点，例如硅的间接带隙无法实现高效发光，而磷化铟与硅工业的兼容性挑战。在这里，我们报告了一种使用纳米结构块体范德华材料的新介电平台。通过利用不同的范德华材料来演示片上光传播、发射和检测。_{采用 MoS 2 的}低损耗无源波导以及采用 InSe 的片上光源和光电探测器已经实现。我们对无源和有源片上光子元件的概念验证演示认可了范德华材料，因为它提供了一个新的介电平台，该平台具有较大的材料选择自由度和独特的性能，可实现接近原子规模的制造芯片光子和光电器件。