In order to improve the preparation efficiency of high-purity silicon, a new method of rotary segregation purification has been developed to prepare polysilicon. Numerical simulation based on ANSYS19.0 software and water model experiments were used to study the distribution of flow field and optimize the impurity removal process. A numerical simulation model suitable for rotating interface is established. The simulation result is in good agreement with the water model experiment. A vortex flow is found in the middle of the mold when the mold insertion depth is 90 mm. The vortex is conducive to the thinning of the impurity enrichment layer at the solid–liquid interface. With the mold insertion depth increases from 90 to 170 mm, two vortex flows appear in the middle and bottom of the mold, respectively. Moreover, setting the mold rotation rate at 100 rpm can contribute to a more stable flow field and a higher melt flow velocity. When the diffusion layer thickness is less than 0.1 mm, the impurity segregation coefficient can approach close to its equilibrium segregation coefficient, indicating that impurity segregation be effectively enhanced by increasing the rotation rate of mold, strengthening the effect of solidification rate and increasing the rotational speed. Industrial tests were carried out at the 100 kg level. The result shows that the rotary segregation method and equipment can achieve the removal of very low impurity in silicon (99.999 pct), and SoG-Si (99.9999 pct) was obtained. This method provides a new way for silicon purification, and it is believed that better results can be obtained through continuous improvement.

为了提高高纯硅的制备效率，发展了一种旋转偏析提纯制备多晶硅的新方法。采用基于ANSYS19.0软件的数值模拟和水模型实验，研究流场分布，优化除杂工艺。建立了适用于旋转界面的数值模拟模型。仿真结果与水模实验吻合较好。当模具插入深度为 90 mm 时，在模具中间发现涡流。涡流有利于固液界面处的杂质富集层变薄。随着模具插入深度从 90 mm 增加到 170 mm，模具中部和底部分别出现两个涡流。而且，将模具转速设置为 100 rpm 有助于形成更稳定的流场和更高的熔体流动速度。当扩散层厚度小于0.1 mm时，杂质偏析系数可以接近其平衡偏析系数，说明提高结晶器转速、加强凝固速率的作用和提高转速可以有效地增强杂质偏析。 . 在 100 公斤的水平上进行了工业测试。结果表明，旋转偏析方法和设备可以实现硅中极低杂质（99.999 pct）的去除，得到了SoG-Si（99.9999 pct）。该方法为硅提纯提供了一种新的途径，相信通过不断的改进可以获得更好的结果。