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An Eight-Element 136鈥147 GHz Wafer-Scale Phased-Array Transmitter With 32 dBm Peak EIRP and >16 Gbps 16QAM and 64QAM Operation
IEEE Journal of Solid-State Circuits ( IF 4.6 ) Pub Date : 2022-02-17 , DOI: 10.1109/jssc.2022.3148385
Siwei Li 1 , Zhe Zhang 1 , Gabriel M. Rebeiz 1
Affiliation  

This article presents a 140-GHz eight-element wafer-scale phased-array transmitter based on intermediate-frequency (IF) beamforming with 5-bit phase and 4-bit gain control in the GlobalFoundries 45RFSOI process. The chip contains a shared local-oscillator (LO) multiplier chain and distribution network for a phased-array transmitter system solution. Image rejection filters are designed before the RF front-end power amplifiers (PAs) to suppress the image and improve the PA linearity. A differential on-chip antenna feed is electromagnetically coupled to a high-efficiency microstrip antenna on a 100- μm\mu \text{m} -thick quartz superstrate, and the antennas are placed λ\lambda /2 (~140 GHz) apart in the horizontal and vertical directions. The 4×24\times 2 element phased-array chip with attached quartz superstrate is wirebonded to a printed circuit board containing IF and LO ports and scans to ±30° in the elevation plane ( EE -plane). The measured array peak electronic gain is 21 dB with an RF 3-dB bandwidth of 136–147 GHz and an IF bandwidth of 3–4 GHz. The measured array peak effective isotropic radiated power (EIRP) is 30–32 dBm at 134–142 GHz. To evaluate the over-the-air (OTA) performance, a transmit (Tx) array-horn communication link is demonstrated with quadrature phase shift keying (QPSK), 16-quadrature amplitude modulation (QAM), and 64-QAM waveforms, supporting up to 16–18-Gb/s data rates. Also, a transmit–receive phased-array wireless link at 0.65 m is demonstrated with 11–12-Gb/s data rates using 16- and 64-QAM waveforms. To the best of our knowledge, this article presents the first CMOS wafer-scale phased-array transmitter at 140 GHz with high EIRP and data rate.

中文翻译:


八元件 136-147 GHz 晶圆级相控阵发射机,具有 32 dBm 峰值 EIRP 和 >16 Gbps 16QAM 和 64QAM 操作



本文介绍了一款基于中频 (IF) 波束形成的 140 GHz 八元件晶圆级相控阵发射器,在 GlobalFoundries 45RFSOI 工艺中具有 5 位相位和 4 位增益控制。该芯片包含用于相控阵发射器系统解决方案的共享本地振荡器 (LO) 乘法器链和分配网络。镜像抑制滤波器设计在射频前端功率放大器 (PA) 之前,用于抑制镜像并提高 PA 线性度。差分片上天线馈源通过电磁耦合到 100 μm\mu \text{m} 厚的石英基板上的高效微带天线,并且天线间隔 λ\lambda /2 (~140 GHz)在水平和垂直方向上。带有石英覆盖层的 4×24×2 元件相控阵芯片被引线键合到包含 IF 和 LO 端口的印刷电路板上,并在仰角平面(EE 平面)中扫描至 ±30°。测得的阵列峰值电子增益为 21 dB,RF 3 dB 带宽为 136–147 GHz,IF 带宽为 3–4 GHz。测得的阵列峰值有效各向同性辐射功率 (EIRP) 在 134–142 GHz 时为 30–32 dBm。为了评估无线 (OTA) 性能,使用正交相移键控 (QPSK)、16 正交幅度调制 (QAM) 和 64-QAM 波形演示了发射 (Tx) 阵列喇叭通信链路,支持高达 16–18 Gb/s 的数据速率。此外,还使用 ​​16-QAM 和 64-QAM 波形演示了 0.65 m 处的发射-接收相控阵无线链路,数据速率为 11-12-Gb/s。据我们所知,本文介绍了首款 140 GHz 的 CMOS 晶圆级相控阵发射器,具有高 EIRP 和数据速率。
更新日期:2022-02-17
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