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A High Dynamic Range 128 脳 120 3-D Stacked CMOS SPAD Image Sensor SoC for Fluorescence Microendoscopy
IEEE Journal of Solid-State Circuits ( IF 4.6 ) Pub Date : 2022-03-01 , DOI: 10.1109/jssc.2022.3150721
Ahmet T. Erdogan 1 , Tarek Al Abbas 1 , Neil Finlayson 1 , Charlotte Hopkinson 1 , Istvan Gyongy 1 , Oscar Almer 1 , Neale A. W. Dutton 2 , Robert K. Henderson 1
Affiliation  

A miniaturized 1.4 mm ×1.4\times \,\, 1.4 mm, 128×120128\times120 single-photon avalanche diode (SPAD) image sensor with a five-wire interface is designed for time-resolved fluorescence microendoscopy. This is the first endoscopic chip-on-tip sensor capable of fluorescence lifetime imaging microscopy (FLIM). The sensor provides a novel, compact means to extend the photon counting dynamic range (DR) by partitioning the required bit depth between in-pixel counters and off-pixel noiseless frame summation. The sensor is implemented in STMicroelectronics 40-/90-nm 3-D-stacked backside-illuminated (BSI) CMOS process with 8- μm\mu \text{m} pixels and 45% fill factor. The sensor capabilities are demonstrated through FLIM examples, including ex vivo human lung tissue, obtained at video rate.

中文翻译:


用于荧光显微内窥镜检查的高动态范围 128 × 120 3D 堆叠式 CMOS SPAD 图像传感器 SoC



一种具有五线接口的小型化 1.4 mm ×1.4\times \,\, 1.4 mm、128×120128\times120 单光子雪崩二极管 (SPAD) 图像传感器,专为时间分辨荧光显微内窥镜检查而设计。这是第一个能够进行荧光寿命成像显微镜 (FLIM) 的内窥镜尖端芯片传感器。该传感器提供了一种新颖、紧凑的方法,通过在像素内计数器和像素外无噪声帧求和之间划分所需的位深度来扩展光子计数动态范围 (DR)。该传感器采用意法半导体 40/90 nm 3D 堆叠背照式 (BSI) CMOS 工艺实现,具有 8 μm\mu \text{m} 像素和 45% 填充因子。传感器功能通过 FLIM 示例进行演示,包括以视频速率获得的离体人体肺组织。
更新日期:2022-03-01
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