Owing to the increase in the demand for energy autonomy in electronic systems, there has been increased research interest in thermoelectric thin-film-based energy harvesters. However, the fabrication of such devices is challenging when considering material performance and integration processes. SnSe has emerged as among the best bulk thermoelectric materials capable of functioning at high temperatures; however, the thermoelectric performance of thin films is still limited. Herein, we present a solution-processed fabrication of high-performance Ag-doped SnSe thin films operable in a low-temperature range. The Ag doping induces the preferred crystallographic orientation and grain growth in the b–c plane (in-plane) of SnSe, consequently enhancing thermoelectric performance at low temperatures. Moreover, thin-film wrinkling and photolithography are employed in the fabrication of stretchable and patterned devices, in which power generation performance is then evaluated, thereby demonstrating the feasibility of the proposed thin films as an energy harvester in emerging electronic systems.

中文翻译：

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用于低温发电的溶液处理空穴掺杂 SnSe 热电薄膜器件

由于电子系统对能量自主性的需求增加，人们对基于热电薄膜的能量收集器的研究兴趣增加。然而，在考虑材料性能和集成工艺时，此类器件的制造具有挑战性。SnSe 已成为能够在高温下发挥作用的最佳块状热电材料之一。然而，薄膜的热电性能仍然有限。在此，我们提出了一种可在低温范围内操作的高性能 Ag 掺杂 SnSe 薄膜的溶液加工制造。Ag 掺杂在b - c中诱导了优选的晶体取向和晶粒生长SnSe 的平面（平面内），从而提高了低温下的热电性能。此外，薄膜起皱和光刻被用于制造可拉伸和图案化的器件，然后评估发电性能，从而证明所提出的薄膜在新兴电子系统中作为能量收集器的可行性。