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High-Responsivity and Fast-Response Ultraviolet Phototransistors Based on Enhanced p-GaN/AlGaN/GaN HEMTs
ACS Photonics ( IF 6.5 ) Pub Date : 2022-05-26 , DOI: 10.1021/acsphotonics.2c00177 Haiping Wang 1 , Haifan You 1 , Yang Xu 1 , Xinyu Sun 1 , Yiwang Wang 1 , Danfeng Pan 1 , Jiandong Ye 1 , Bin Liu 1 , Dunjun Chen 1 , Hai Lu 1 , Rong Zhang 1 , Youdou Zheng 1
ACS Photonics ( IF 6.5 ) Pub Date : 2022-05-26 , DOI: 10.1021/acsphotonics.2c00177 Haiping Wang 1 , Haifan You 1 , Yang Xu 1 , Xinyu Sun 1 , Yiwang Wang 1 , Danfeng Pan 1 , Jiandong Ye 1 , Bin Liu 1 , Dunjun Chen 1 , Hai Lu 1 , Rong Zhang 1 , Youdou Zheng 1
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We report high-performance visible-blind ultraviolet (UV) phototransistors (PTs) based on an enhanced HEMT structure. In dark conditions, the conduction channel was depleted, and the dark current density was suppressed to 2.63 × 10–10 mA/mm. Under 345 nm UV illumination, the depletion region shrinks, and the two-dimensional electron gas (2DEG) recovers. A high photocurrent density of 37.39 mA/mm, a peak responsivity of 6.80 × 104 A/W, a large photo-to-dark-current ratio (PDCR) of 1.42 × 1011, and a superior UV-to-visible rejection ratio (UVRR) of 4.84 × 107 are exhibited. Most importantly, the device presents an ultrafast response time of 11.33 μs/65.52 μs, which is due to the significant suppression of the persistent photoconductivity effect by the built-in electric field in the p–n junction. The results suggest that the p-GaN/AlGaN/GaN PT is a brand-new device model that combines the advantages of photoconductors with high responsivity and photodiodes with low dark current and fast response time.
中文翻译：
基于增强型 p-GaN/AlGaN/GaN HEMT 的高响应和快速响应紫外光电晶体管
我们报告了基于增强型 HEMT 结构的高性能可见盲紫外 (UV) 光电晶体管 (PT)。在黑暗条件下，传导通道被耗尽，暗电流密度被抑制到 2.63 × 10 –10 mA/mm。在 345 nm 紫外线照射下，耗尽区缩小，二维电子气 (2DEG) 恢复。37.39 mA/mm 的高光电流密度、6.80 × 10 4 A/W 的峰值响应度、1.42 × 10 11的大光暗电流比 (PDCR)以及出色的紫外-可见光抑制比率 (UVRR) 为 4.84 × 10 7被展出。最重要的是，该器件具有 11.33 μs/65.52 μs 的超快响应时间，这是由于 p-n 结中的内置电场显着抑制了持久光电导效应。结果表明，p-GaN/AlGaN/GaN PT是一种全新的器件模型，它结合了具有高响应率的光电导体和具有低暗电流和快速响应时间的光电二极管的优点。
更新日期：2022-05-26
中文翻译：
基于增强型 p-GaN/AlGaN/GaN HEMT 的高响应和快速响应紫外光电晶体管
我们报告了基于增强型 HEMT 结构的高性能可见盲紫外 (UV) 光电晶体管 (PT)。在黑暗条件下，传导通道被耗尽，暗电流密度被抑制到 2.63 × 10 –10 mA/mm。在 345 nm 紫外线照射下，耗尽区缩小，二维电子气 (2DEG) 恢复。37.39 mA/mm 的高光电流密度、6.80 × 10 4 A/W 的峰值响应度、1.42 × 10 11的大光暗电流比 (PDCR)以及出色的紫外-可见光抑制比率 (UVRR) 为 4.84 × 10 7被展出。最重要的是，该器件具有 11.33 μs/65.52 μs 的超快响应时间，这是由于 p-n 结中的内置电场显着抑制了持久光电导效应。结果表明，p-GaN/AlGaN/GaN PT是一种全新的器件模型，它结合了具有高响应率的光电导体和具有低暗电流和快速响应时间的光电二极管的优点。
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