This article presents a method to distinguish between the various conduction mechanisms through insulators in MOS structures whose expressions are exponential functions of voltage. This method accounts for the voltage drop (ΔV) across the parasitic resistance that could be significantly present in series with the MOS structure. This graphical method is based on a new Normalized Direct Conductance function to extract the value ΔV. The validity of the proposed method has been ascertained by using Silvaco TCAD simulations and measurements of the gate leakage current of an experimental n-channel MOSFET. The band diagram with the corresponding numerical values also verifies the extracted value of ΔV. It is concluded that the dominant conduction mechanism is Poole-Frenkel for the middle gate voltage region while Hot Electron Injection dominates for low- and high-voltage regions.

本文提出了一种方法来区分通过 MOS 结构中的绝缘体的各种传导机制，其表达式是电压的指数函数。这种方法考虑了寄生电阻上的电压降 ( ΔV )，它可能与 MOS 结构串联。此图形方法基于新的归一化直接电导函数来提取值ΔV。通过使用 Silvaco TCAD 模拟和对实验性 n 沟道 MOSFET 的栅极泄漏电流的测量，已经确定了所提出方法的有效性。带有相应数值的能带图也验证了ΔV的提取值. 得出的结论是，在中栅极电压区域，主要的传导机制是 Poole-Frenkel，而在低压和高压区域，热电子注入占主导地位。