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Coexistence of Robust Edge States and Superconductivity in Few-Layer Stanene
Physical Review Letters ( IF 8.1 ) Pub Date : 2022-05-17 , DOI: 10.1103/physrevlett.128.206802
Chenxiao Zhao 1 , Leiqiang Li 2 , Liying Zhang 3, 4 , Jin Qin 1 , Hongyuan Chen 1 , Bing Xia 1 , Bo Yang 1 , Hao Zheng 1, 5, 6 , Shiyong Wang 1, 5, 6 , Canhua Liu 1, 5, 6 , Yaoyi Li 1, 5, 6 , Dandan Guan 1 , Ping Cui 2 , Zhenyu Zhang 2 , Jinfeng Jia 1, 5, 6
Affiliation  

High-quality stanene films have been actively pursued for realizing not only quantum spin Hall edge states without backscattering, but also intrinsic superconductivity, two central ingredients that may further endow the systems to host topological superconductivity. Yet to date, convincing evidence of topological edge states in stanene remains to be seen, let alone the coexistence of these two ingredients, owing to the bottleneck of growing high-quality stanene films. Here we fabricate one- to five-layer stanene films on the Bi(111) substrate and observe the robust edge states using scanning tunneling microscopy/spectroscopy. We also measure distinct superconducting gaps on different-layered stanene films. Our first-principles calculations further show that hydrogen passivation plays a decisive role as a surfactant in improving the quality of the stanene films, while the Bi substrate endows the films with nontrivial topology. The coexistence of nontrivial topology and intrinsic superconductivity renders the system a promising candidate to become the simplest topological superconductor based on a single-element system.

中文翻译:

强边缘态和超导在少层 Stanene 中的共存

高质量的 stanene 薄膜不仅可以实现无反向散射的量子自旋霍尔边缘态,还可以实现本征超导性,这两个核心成分可能会进一步赋予系统承载拓扑超导性。然而迄今为止,由于生长高质量的stanene薄膜的瓶颈,stanene中拓扑边缘态的令人信服的证据还有待观察,更不用说这两种成分的共存了。在这里,我们在 Bi(111) 基板上制造了 1 到 5 层的 stanene 薄膜,并使用扫描隧道显微镜/光谱学观察了坚固的边缘状态。我们还测量了不同层状锡烯薄膜上不同的超导间隙。我们的第一性原理计算进一步表明,氢钝化作为表面活性剂在提高锡烯薄膜的质量方面起着决定性的作用,而铋衬底赋予薄膜非平凡的拓扑结构。非平凡拓扑和本征超导性的共存使该系统有望成为基于单元素系统的最简单的拓扑超导体。
更新日期:2022-05-18
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