Abstract

The formation of the Cu₆Sn₅ intermetallic in Sn(55nm)/Cu(30nm) thin-film bilayers has been studied upon heating the film sample from room temperature to 300°C directly in a column of a transmission electron microscope in the electron diffraction mode with recording electron diffraction patterns. The thin films synthesized by the solid-state reaction have been found to be single-phase and consist of the η-Cu₆Sn₅ hexagonal phase (95‒260°C). It has been suggested basing on the effective interdiffusion coefficient (5 × 10^‒16 m²/s) estimated in the course of the reaction that the main mechanism of the formation of the Cu₆Sn₅ thin films is diffusion along grain boundaries and dislocations.

中文翻译：

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Cu/Sn 薄膜中 Cu6Sn5 金属间化合物的形成

摘要

研究了在 Sn(55nm)/Cu(30nm) 薄膜双层中Cu ₆ Sn ₅金属间化合物的形成，将薄膜样品从室温直接加热到 300°C，在电子透射电子显微镜的柱中具有记录电子衍射图案的衍射模式。已发现通过固态反应合成的薄膜是单相的，由 η-Cu ₆ Sn ₅六方相组成（95-260°C）。有人建议根据反应过程中估计的有效互扩散系数（5 × 10 ^‒16 m ^{2 /s）来确定Cu} ₆ Sn _{5形成的主要机制}薄膜沿晶界和位错扩散。