In this work, we have studied the control of set and the reset transitions in TiN/Ti/HfO₂/W resistive switching devices using a new approach based on the injection of a limited amount of charge through the use of a capacitor discharge. Instead of applying conventional voltage or current signals, the capacitor discharge through the devices is able to perform both transitions. An accumulative process is observed if we apply consecutive discharges, and, when increasing the capacitor voltage in each discharge, the transitions between both resistance states are completed. In addition, it has been shown that faster transitions require larger capacitor voltages. Further, the electrical results were used to tune the dynamic memdiode model, which was employed to simulate set and reset processes driven by the capacitor discharges. The model successfully reproduced the measured memristor response to the capacitor discharge.

在这项工作中，我们研究了 TiN/Ti/HfO _{2中置位和复位跃迁的控制}/W 电阻开关器件使用一种新方法，该方法基于通过使用电容器放电来注入有限量的电荷。代替施加传统的电压或电流信号，通过器件的电容器放电能够执行两种转换。如果我们应用连续放电，则会观察到一个累积过程，并且当每次放电时增加电容器电压时，两种电阻状态之间的转换都完成了。此外，已经表明更快的转换需要更大的电容器电压。此外，电学结果用于调整动态 memdiode 模型，该模型用于模拟由电容器放电驱动的置位和复位过程。该模型成功地再现了测量的忆阻器对电容器放电的响应。