With classical scaling of CMOS transistors according to Dennard’s scaling rules running out of steam, new possibilities to increase the functionality of an integrated circuit at a given footprint are becoming more and more desirable. Among these approaches the possibility to reconfigure the functionality of a transistor on the single devices level stand out, as by such an approach the same physical circuitry is enabled to perform different tasks in different configurations of the circuit. Reconfigurable transistors that allow the reconfiguration from a p-channel to an n-channel transistor and vice versa have emerged as an important example of such devices. The basic concepts required to built such devices have been proposed more then 20 years ago and the field has continuously developed ever since. In this article first the basic classification of reconfigurable field effect transistors is reviewed an described form a new angle. In the second part the important technology enablers to construct reconfigure field effect transistors are examined. Further the historical development, starting at the proposal of the main concepts up to the current status of device and circuit development are described. The most important additional features that have been introduced in the last years in order to even further increase the flexibility of the devices are discussed. Finally the application potential of reconfigurable transistors is described placing the spotlight on hardware security and neuromorphic applications.

随着根据 Dennard 的缩放规则对 CMOS 晶体管进行经典缩放的方式已经失效，在给定的占位面积上增加集成电路功能的新可能性变得越来越可取。在这些方法中，在单个设备级别上重新配置晶体管功能的可能性很突出，因为通过这种方法，相同的物理电路能够在电路的不同配置中执行不同的任务。允许从 p 沟道重新配置到 n 沟道晶体管以及反之亦然的可重新配置晶体管已成为此类器件的重要示例。构建此类设备所需的基本概念已在 20 多年前提出，此后该领域一直在不断发展。本文首先从一个新的角度回顾了可重构场效应晶体管的基本分类。在第二部分中，研究了构建重配置场效应晶体管的重要技术推动因素。进一步描述了从提出主要概念到器件和电路开发现状的历史发展。讨论了在过去几年中引入的最重要的附加功能，以进一步提高设备的灵活性。最后，描述了可重构晶体管的应用潜力，将焦点放在硬件安全和神经形态应用上。在第二部分中，研究了构建重配置场效应晶体管的重要技术推动因素。进一步描述了从提出主要概念到器件和电路开发现状的历史发展。讨论了在过去几年中引入的最重要的附加功能，以进一步提高设备的灵活性。最后，描述了可重构晶体管的应用潜力，将焦点放在硬件安全和神经形态应用上。在第二部分中，研究了构建重配置场效应晶体管的重要技术推动因素。进一步描述了从提出主要概念到器件和电路开发现状的历史发展。讨论了在过去几年中引入的最重要的附加功能，以进一步提高设备的灵活性。最后，描述了可重构晶体管的应用潜力，将焦点放在硬件安全和神经形态应用上。讨论了在过去几年中引入的最重要的附加功能，以进一步提高设备的灵活性。最后，描述了可重构晶体管的应用潜力，将焦点放在硬件安全和神经形态应用上。讨论了在过去几年中引入的最重要的附加功能，以进一步提高设备的灵活性。最后，描述了可重构晶体管的应用潜力，将焦点放在硬件安全和神经形态应用上。