Semiconductors, featuring tunable electrical transport, and magnets, featuring tunable spin configurations, form the basis of many information technologies. A long-standing challenge has been to realize materials that integrate and connect these two distinct properties. Two-dimensional (2D) materials offer a platform to realize this concept, but known 2D magnetic semiconductors are electrically insulating in their magnetic phase. Here we demonstrate tunable electron transport within the magnetic phase of the 2D semiconductor CrSBr and reveal strong coupling between its magnetic order and charge transport. This provides an opportunity to characterize the layer-dependent magnetic order of CrSBr down to the monolayer via magnetotransport. Exploiting the sensitivity of magnetoresistance to magnetic order, we uncover a second regime characterized by coupling between charge carriers and magnetic defects. The magnetoresistance within this regime can be dynamically and reversibly tuned by varying the carrier concentration using an electrostatic gate, providing a mechanism for controlling charge transport in 2D magnets.

具有可调电传输特性的半导体和具有可调自旋配置的磁体构成了许多信息技术的基础。一个长期存在的挑战是实现整合和连接这两种不同特性的材料。二维 (2D) 材料提供了实现这一概念的平台，但已知的二维磁性半导体在其磁相中是电绝缘的。在这里，我们展示了二维半导体 CrSBr 磁相内的可调谐电子传输，并揭示了其磁序和电荷传输之间的强耦合。这提供了一个机会，可以通过磁传输来表征 CrSBr 的层相关磁性顺序到单层。利用磁阻对磁序的敏感性，我们发现了以电荷载流子和磁缺陷之间耦合为特征的第二种情况。通过使用静电门改变载流子浓度，可以动态和可逆地调整该范围内的磁阻，从而提供一种控制二维磁体中电荷传输的机制。