Ti₃C₂Tx MXenes are normally fabricated by removal of main group element from the corresponding transition metal carbides, and they have been actively studied due to their superior energy storage performance. However, the low efficiency in removal of main group element (named as chemical etching) has significantly limited the application of MXene or MXene-related materials. Herein, we demonstrated an ultrasound-assisted approach to synthesize Ti₃C₂Tx MXene material by using Ti₃AlC₂ as the precursor. The experimental results indicate that the efficiency of chemical etching of Ti₃AlC₂ was dramatically promoted by ultrasound. The etching time was greatly shortened to 8 h while typically 24 h is sufficient in dilute hydrofluoric acid. Particularly, the high etching efficiency was achieved by using 2% hydrofluoric acid under the aid of ultrasound, which is lower in concentration than those reported in the previous literature. The specific capacitance of the 8 h sonicated sample is 155F/g, which is much higher than that of the un-sonicated sample prepared under the same experimental conditions. Additionally, the specific capacitance retention of the prepared 8 h sonicated sample was 97.5% after 20,000 cycles of charging/discharging, exhibiting an outstanding energy storage stability compared with the materials reported in previous literatures. It was proposed that removal of AlF₃ from the surface of the etched particles was significantly promoted and the hydrogen bonds between the terminations of two different adjacent layers were broken by the acoustic cavitation effect of ultrasound.

Ti ₃ C ₂ Tx MXenes 通常是通过从相应的过渡金属碳化物中去除主族元素来制造的，并且由于其优异的储能性能而受到了积极的研究。然而，主族元素去除效率低（称为化学蚀刻）极大地限制了 MXene 或 MXene 相关材料的应用。_{在此，我们展示了一种以 Ti 3} AlC ₂为前体的超声辅助合成 Ti ₃ C ₂ Tx MXene 材料的方法。实验结果表明，Ti ₃ AlC _{2的化学蚀刻效率}超声显着促进了。蚀刻时间大大缩短至 8 小时，而在稀氢氟酸中通常 24 小时就足够了。特别是在超声波的帮助下使用2%的氢氟酸实现了高蚀刻效率，其浓度低于先前文献报道的浓度。8 h超声处理样品的比电容为155F/g，远高于相同实验条件下制备的未超声处理样品。此外，在 20,000 次充电/放电循环后，制备的 8 小时超声样品的比电容保持率为 97.5%，与之前文献报道的材料相比，表现出出色的储能稳定性。建议去除 AlF ₃超声波的声空化效应使两个不同相邻层的末端之间的氢键被显着促进和氢键断裂。