As the scaling down of semiconductor devices, it would be necessary to discover the structure-property relationship of semiconductor nanomaterials at nanometer scale. In this review, the quantitative characterization technique off-axis electron holography is introduced in details, followed by its applications in various semiconductor nanomaterials including group IV, compound and two-dimensional semiconductor nanostructures in static states as well as under various stimuli. The advantages and disadvantages of off-axis electron holography in material analysis are discussed, the challenges facing in-situ electron holographic study of semiconductor devices at working conditions are presented, and all the possible influencing factors need to be considered to achieve the final goal of fulfilling quantitative characterization of the structure-property relationship of semiconductor devices at their working conditions.

中文翻译：

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离轴电子全息法研究半导体纳米材料的结构-性能关系

随着半导体器件的按比例缩小，有必要在纳米尺度上发现半导体纳米材料的结构-性能关系。在这篇综述中，详细介绍了离轴电子全息术的定量表征技术，随后介绍了其在各种半导体纳米材料中的应用，包括静态和各种刺激下的 IV 族、化合物和二维半导体纳米结构。讨论了材料分析中离轴电子全息术的优缺点，面临的挑战就地提出了工作条件下半导体器件的电子全息研究，需要考虑所有可能的影响因素，以实现对工作条件下半导体器件结构-性能关系的定量表征的最终目标。