Charge-coupled devices are widely used imaging technologies. However, their speed is limited due to the complex readout process, which involves sequential charge transfer between wells, and their spectral bandwidth is limited due to the absorption limitations of silicon. Here we report graphene charge-injection photodetectors. The devices have a deep-depletion silicon well for charge integration, single-layer graphene for non-destructive direct readout and multilayer graphene for infrared photocharge injection. The photodetectors offer broadband imaging from ultraviolet (around 375 nm) to mid-infrared (around 3.8 μm), a conversion gain of 700 pA per electron, a responsivity above 0.1 A W⁻¹ in the infrared region and a fast response time under 1 μs.

电荷耦合器件是广泛使用的成像技术。然而，由于复杂的读出过程（包括阱之间的顺序电荷转移），它们的速度受到限制，并且由于硅的吸收限制，它们的光谱带宽受到限制。在这里，我们报告了石墨烯电荷注入光电探测器。这些器件具有用于电荷集成的深耗尽硅阱、用于非破坏性直接读出的单层石墨烯和用于红外光电荷注入的多层石墨烯。光电探测器提供从紫外（约 375 nm）到中红外（约 3.8 μm）的宽带成像，每个电子的转换增益为 700 pA，红外区域的响应度高于 0.1 A W ^-1和低于 1 μs 的快速响应时间.