The monolithic integration of soliton microcomb devices with active photonic components and high-frequency electronics is highly desirable for practical applications. Among many materials, silicon nitride (${\mathrm{SiN}}_x$) waveguide layers prepared by low-pressure chemical vapor deposition (LPCVD) have been the main platform for on-chip optical frequency comb generation. However, the high temperatures involved in LPCVD render it incompatible as a back-end process with complementary metal oxide semiconductor (CMOS) or active III-V compound semiconductor fabrication flows. We report the generation of coherent soliton frequency combs in micro-ring resonators fabricated in deuterated silicon nitride (${\mathrm{SiN}}_x\text{:}\mathrm{D}$) waveguides with a loss of 0.09 dB/cm. Deposited at 270°C by an inductance-coupled plasma chemical vapor deposition (ICP-CVD) process, the material preparation and fabrication flow are fully CMOS-compatible. These results enable the integration of silicon-nitride-based optical combs and photonic integrated circuits (PICs) on prefabricated CMOS and/or III-V substrates, therefore marking a major step forward in ${\mathrm{SiN}}_x$ photonic technologies.

中文翻译：

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在 CMOS 兼容的氮化硅微谐振器中产生孤子频率梳

孤子微梳器件与有源光子元件和高频电子器件的单片集成对于实际应用是非常理想的。在众多材料中，氮化硅（${罪}_X$) 通过低压化学气相沉积 (LPCVD) 制备的波导层已成为片上光频梳生成的主要平台。然而，LPCVD 涉及的高温使其作为后端工艺与互补金属氧化物半导体 (CMOS) 或有源 III-V 化合物半导体制造流程不兼容。我们报告了在氘化氮化硅制造的微环谐振器中产生相干孤子频率梳（${罪}_X\text{：}\mathrm{D}$) 损耗为 0.09 dB/cm 的波导。通过电感耦合等离子体化学气相沉积 (ICP-CVD) 工艺在 270°C 沉积，材料制备和制造流程完全兼容 CMOS。这些结果使基于氮化硅的光梳和光子集成电路 (PIC) 集成在预制 CMOS 和/或 III-V 衬底上成为可能，因此标志着在${罪}_X$光子技术。