Increasing the triboelectric charge density on the friction layer of polydimethylsiloxane (PDMS) is a basic approach towards improving the output performance of a triboelectric nanogenerator (TENG). Most previous work focuses on the surface structure or dielectric properties, nonetheless, a few studies have focused on electronegative modification. NaNbO3-PDMS TENG (N-TENG) devices are fabricated by dispersing cubic NaNbO3, which is a lead-free piezoelectric material with molecular oxygen dangling bonds on the surface of the crystal, into the PDMS at different mass ratios. When the mass ratio is 7 wt%, the maximum output performance of the N-TENG is obtained. The open-circuit voltage is 550 V, the short-circuit current is 16 µA, and the effective power densities reach up to 5.5 W m−2 at a load resistance of ~100 MΩ. The N-TENG has been used to assemble self-powered electronic watches and illuminate commercial light-emitting diodes, respectively. Its fundamental mechanism has also been discussed in detail from the perspective of dielectric modulation and electronegative modification. This N-TENG technology is revealed to be a splendid candidate for application in large-scale device fabrication, flexible sensors and biological devices thanks to its easy fabrication process, low consumption, high output power density and biocompatibility.

中文翻译：

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通过介电调制和负电改性提高 NaNbO3 摩擦纳米发电机的性能

增加聚二甲基硅氧烷（PDMS）摩擦层上的摩擦电荷密度是提高摩擦纳米发电机（TENG）输出性能的基本方法。大多数以前的工作都集中在表面结构或介电特性上，然而，一些研究集中在电负性修饰上。NaNbO3-PDMS TENG (N-TENG) 器件是通过将立方 NaNbO3（一种晶体表面具有分子氧悬空键的无铅压电材料）以不同的质量比分散到 PDMS 中制成的。当质量比为 7 wt% 时，获得了 N-TENG 的最大输出性能。开路电压为 550 V，短路电流为 16 µA，在 ~100 MΩ 的负载电阻下，有效功率密度高达 5.5 W m-2。N-TENG 已分别用于组装自供电电子手表和照亮商业发光二极管。还从介电调制和电负性修饰的角度对其基本机制进行了详细讨论。这种 N-TENG 技术因其易于制造、低消耗、高输出功率密度和生物相容性而被证明是应用于大规模设备制造、柔性传感器和生物设备的绝佳候选者。