This paper proposes a math-physical correlative method that monitors deep defect response by electrical measurement and calculates the state density by designed mathematical processing. The extracted Gaussian distribution of deep defects was discussed according to the theoretical model for the density of states. The accuracy of this method was also verified through 1/f low frequency noise analysis. The origination of deep defects was investigated by transmission electron microscope, x-ray photoelectron spectroscopy, and photoluminescence analysis, and a molecular model was constructed. Therefore, multiple perspectives of deep defects have been studied by combining electrical measurements, mathematical data processing, and materials analysis, providing inspiration for future comprehensive study on deep defects of the GaN-based device.

中文翻译：

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AlGaN/GaN MIS-HEMT深部缺陷高斯分布观察及起源识别

本文提出了一种通过电测量监测深部缺陷响应并通过设计的数学处理计算态密度的数理关联方法。根据态密度的理论模型讨论了提取的深缺陷的高斯分布。通过1/f低频噪声分析也验证了该方法的准确性。通过透射电子显微镜、X 射线光电子能谱和光致发光分析研究了深缺陷的起源，并构建了分子模型。因此，结合电学测量、数学数据处理和材料分析，从多个角度对深部缺陷进行了研究，为今后综合研究GaN基器件的深部缺陷提供了启示。