Crystals of 1,3,6,8-tetrakis(4′-methoxycarbonylphenyl)pyrene (383 µm × 36 µm) were successfully obtained on a substrate by a heat-melt and recrystallization method. The crystals showed the photoluminescence (PL) spectra with clear vibronic structures, which indicates a lack of direct π–π interaction between pyrene cores. Polarized PL spectra suggested strong reabsorption of the crystals. Field-effect transistors (FETs) having a bottom-gate bottom-contact structure were fabricated using the polycrystals as an active layer. These devices showed p-type characteristics with the maximum carrier mobility of 2.1 × 10⁻⁶ cm² V⁻¹ s⁻¹ in the linear region and 5.1 × 10⁻⁶ cm² V⁻¹ s⁻¹ in the saturation region. The fabricated FET showed light emission under applying higher voltages (V_GS = −185 V, V_DS = −162 V) just before breaking down.

采用热熔重结晶法在基板上成功获得了1,3,6,8-四(4'-甲氧羰基苯基)芘晶体(383 µm × 36 µm)。晶体显示出具有清晰振动结构的光致发光 (PL) 光谱，这表明芘核之间缺乏直接的 π-π 相互作用。偏振 PL 光谱表明晶体有强烈的重吸收。使用多晶作为有源层来制造具有底栅底接触结构的场效应晶体管（FET）。这些器件显示出p型特性，在线性区域中最大载流子迁移率为2.1×10 ^-6 cm ² V ^-1 s ^-1和5.1×10 ^-6 cm ² V ^-1s ^-1在饱和区。在击穿之前，制造的 FET 在施加更高电压（V _GS = -185 V，V _{DS = -162 V）下显示出发光。}