2D Heterostructure of Bi2O2Se/Bi2SeOx Nanosheet for Resistive Random Access Memory,Advanced Electronic Materials

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2D Heterostructure of Bi2O2Se/Bi2SeOx Nanosheet for Resistive Random Access Memory
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-04-27 , DOI: 10.1002/aelm.202200126
Yan Xia ₁ , Jing Wang ₁ , Rui Chen ₁ , Hongbo Wang ₁ , Hang Xu ₁ , Changzhong Jiang ₁ , Wenqing Li ₁ , Xiangheng Xiao _{1,

2}

Affiliation

2D materials have shown great potential in the application of resistive random access memory (RRAM) for information storage. Much attention has been attracted from 2D semiconducting bismuth oxyselenide (Bi₂O₂Se) for excellent properties in multi-performance nanoelectronics. By using a chemical vapor deposition (CVD) method, Bi₂O₂Se nanosheets with high quality are grown. Combining with the oxygen plasma method, 2D heterostructure of Bi₂O₂Se/Bi₂SeO_x nanosheet is realized; and the heterostructure exhibits obvious resistive switching behavior. The resistive switching mechanism is analyzed in detail, and the conductive mechanism of the fabricated device is also discussed. The resistive switching of Bi₂O₂Se nanosheets is endowed through the method of O₂ plasma treatment, which makes it feasible for developing its application in the RRAM.

中文翻译：

用于电阻随机存取存储器的 Bi2O2Se/Bi2SeOx 纳米片的二维异质结构

二维材料在电阻随机存取存储器 (RRAM) 用于信息存储的应用中显示出巨大的潜力。二维半导体氧硒化铋（Bi ₂ O ₂ Se）因其在多功能纳米电子学中的优异性能而引起了广泛关注。通过使用化学气相沉积（CVD）方法，生长出高质量的Bi ₂ O _{2 Se 纳米片。}结合氧等离子体法，Bi ₂ O ₂ Se/Bi ₂ SeO _{x的二维异质结构}实现了纳米片；并且异质结构表现出明显的电阻转换行为。详细分析了电阻切换机制，并讨论了所制造器件的导电机制。_{通过O 2}等离子体处理的方法赋予Bi ₂ O ₂ Se 纳米片的电阻转换特性，使其在RRAM中的应用具有可行性。

更新日期：2022-04-27

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