Two-dimensional semiconductors can be used to build next-generation electronic devices with ultrascaled channel lengths. However, semiconductors need to be integrated with high-quality dielectrics—which are challenging to deposit. Here we show that single-crystal strontium titanate—a high-κ perovskite oxide—can be integrated with two-dimensional semiconductors using van der Waals forces. Strontium titanate thin films are grown on a sacrificial layer, lifted off and then transferred onto molybdenum disulfide and tungsten diselenide to make n-type and p-type transistors, respectively. The molybdenum disulfide transistors exhibit an on/off current ratio of 10⁸ at a supply voltage of 1 V and a minimum subthreshold swing of 66 mV dec⁻¹. We also show that the devices can be used to create low-power complementary metal–oxide–semiconductor inverter circuits.

二维半导体可用于构建具有超尺度沟道长度的下一代电子器件。然而，半导体需要与高质量的电介质集成——这很难沉积。在这里，我们展示了单晶钛酸锶（一种高κ钙钛矿氧化物）可以使用范德华力与二维半导体集成。钛酸锶薄膜在牺牲层上生长，剥离，然后转移到二硫化钼和二硒化钨上，分别制成 n 型和 p 型晶体管。二硫化钼晶体管在 1 V 的电源电压和 66 mV dec ^{-1的最小亚阈值摆幅下表现出 10 8}的开/关电流比. 我们还表明，这些器件可用于创建低功率互补金属氧化物半导体逆变器电路。