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Improving PEC Performance of BiVO4 by Introducing Bulk Oxygen Vacancies by He+ Ion Irradiation
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2022-04-25 , DOI: 10.1021/acs.jpcc.2c00433 Hui Duan 1 , Hengyi Wu 1 , Huizhou Zhong 1 , Xuening Wang 1 , Wenjing Wan 1 , Derun Li 1 , Guangxu Cai 1 , Changzhong Jiang 1 , Feng Ren 1, 2
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2022-04-25 , DOI: 10.1021/acs.jpcc.2c00433 Hui Duan 1 , Hengyi Wu 1 , Huizhou Zhong 1 , Xuening Wang 1 , Wenjing Wan 1 , Derun Li 1 , Guangxu Cai 1 , Changzhong Jiang 1 , Feng Ren 1, 2
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Bismuth vanadate is a promising semiconductor in photoelectrochemical (PEC) water oxidation due to its suitable band gap (∼2.4 eV) for absorption of solar spectrum. Nevertheless, low charge mobility and poor photogenerated carrier separation efficiency of BiVO4 lead to unsatisfactory photocurrent densities and poor PEC performance. Here, we report an innovative method of introducing bulk oxygen vacancies into BiVO4 film through helium ion irradiation to improve the transfer and separation efficiency by improving the bulk conductivity. The result indicates that the highest photocurrent density of the ion-irradiated BiVO4 reaches 1.33 mA cm–2 at 1.2 V vs RHE, which is about 70% higher than that of the un-irradiated one (∼0.77 mA cm–2). The corresponding highest IPCE reaches 40% around 400 nm, which is double compared with that of the un-irradiated BiVO4. Therefore, ion irradiation is an effective and precise method to improve the photoelectrochemical performance by inducing bulk oxygen vacancies into BiVO4. It can also be extended to other photoelectrode materials.
中文翻译：
通过 He+ 离子辐照引入体氧空位提高 BiVO4 的 PEC 性能
钒酸铋是一种很有前途的光电化学（PEC）水氧化半导体，因为它具有适合吸收太阳光谱的带隙（~2.4 eV）。然而，BiVO 4的低电荷迁移率和较差的光生载流子分离效率导致不令人满意的光电流密度和较差的 PEC 性能。在这里，我们报告了一种通过氦离子照射将体氧空位引入BiVO 4薄膜的创新方法，通过提高体电导率来提高转移和分离效率。结果表明，离子辐照的 BiVO 4的最高光电流密度在 1.2 V vs RHE 时达到 1.33 mA cm –2，比未辐照的 BiVO 4 (~0.77 mA cm) 高约 70%–2 )。相应的最高IPCE在400 nm左右达到40%，是未辐照的BiVO 4的两倍。因此，离子辐照是一种通过在BiVO 4中诱导体氧空位来提高光电化学性能的有效且精确的方法。它还可以扩展到其他光电极材料。
更新日期：2022-04-25
中文翻译：
通过 He+ 离子辐照引入体氧空位提高 BiVO4 的 PEC 性能
钒酸铋是一种很有前途的光电化学（PEC）水氧化半导体，因为它具有适合吸收太阳光谱的带隙（~2.4 eV）。然而，BiVO 4的低电荷迁移率和较差的光生载流子分离效率导致不令人满意的光电流密度和较差的 PEC 性能。在这里，我们报告了一种通过氦离子照射将体氧空位引入BiVO 4薄膜的创新方法，通过提高体电导率来提高转移和分离效率。结果表明，离子辐照的 BiVO 4的最高光电流密度在 1.2 V vs RHE 时达到 1.33 mA cm –2，比未辐照的 BiVO 4 (~0.77 mA cm) 高约 70%–2 )。相应的最高IPCE在400 nm左右达到40%，是未辐照的BiVO 4的两倍。因此，离子辐照是一种通过在BiVO 4中诱导体氧空位来提高光电化学性能的有效且精确的方法。它还可以扩展到其他光电极材料。
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