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Efficiency enhancement of Cu2ZnSn(S, Se)4 solar cells by addition a CuSe intermediate layer between Cu2ZnSn(S, Se)4 and Mo electrode
Journal of Alloys and Compounds ( IF 5.8 ) Pub Date : 2022-04-20 , DOI: 10.1016/j.jallcom.2022.165056
JiaYong Zhang 1, 2 , Bin Yao 1, 2 , Zhanhui Ding 1 , Yongfeng Li 1 , Ting Wang 1, 2 , Chunkai Wang 1, 2 , Jia liu 1, 2 , Ding Ma 1, 2 , Dongxu Zhang 1, 2
Affiliation  

A CuSe intermediate layer (IL) is prepared between CZTSSe and Mo electrode to decay the carrier recombination on the rear surface of the CZTSSe absorber. The power conversion efficiency (PCE) can be increased from 7.52% to 10.09% by optimizing the thickness of CuSe IL. The increased PCE comes from improvement in filling factor (FF), short-circuit current density (JSC), and open-circuit voltage (VOC), and their contribution percent is calculated to be 63.08%, 24.83%, and 12.09%, respectively. It is demonstrated that boosted FF is mainly due to decreased reverse saturation current density (J0), raised JSC owing to higher photogenerated current density (JL), and enhanced VOC caused by decreased J0 and higher JL. The contribution percent of (ideal factor (A), J0), JL, Rs, and shunt resistance (Rsh) to increased PCE is calculated to be 60.84%, 27.41%, 10.33%, and 1.42%, respectively. By experimental characterization and SCAPS-1D simulation, it is suggested that decreased J0 results from the formation of passivation field and high electron potential barrier at the rear surface of CZTSSe due to the addition of suitable thickness CuSe IL, higher JL from the increase in width of the depletion region of CZTSSe/CdS, lower Rs from decrease in thickness of Mo(S, Se)2, and bigger Rsh from improved crystal quality of CZTSSe absorber.



中文翻译:

通过在 Cu2ZnSn(S,Se)4 和 Mo 电极之间添加 CuSe 中间层提高 Cu2ZnSn(S,Se)4 太阳能电池的效率

在 CZTSSe 和 Mo 电极之间制备 CuSe 中间层 (IL),以衰减 CZTSSe 吸收体背面的载流子复合。通过优化 CuSe IL 的厚度,功率转换效率(PCE)可以从 7.52% 提高到 10.09%。PCE的增加来自于填充因子(FF)、短路电流密度(J SC)和开路电压(V OC)的提高,计算出它们的贡献率分别为63.08%、24.83%和12.09% , 分别。结果表明,提高的 FF 主要是由于降低了反向饱和电流密度 (J 0 ),提高了 J SC由于较高的光生电流密度 (J L ),以及增强了 V OC由 J 0降低和 J L升高引起。(理想因子(A)、J 0 )、J L、R s和分流电阻(R sh )对PCE增加的贡献率计算分别为60.84%、27.41%、10.33%和1.42%。通过实验表征和SCAPS-1D模拟,表明由于添加了合适厚度的CuSe IL,在CZTSSe背面形成了钝化场和高电子势垒,从而降低了J 0 ,增加了更高的J L在 CZTSSe/CdS 的耗尽区的宽度上,由于Mo(S, Se) 2的厚度减小,R s降低, 和更大的 R sh来自 CZTSSe 吸收体晶体质量的提高。

更新日期:2022-04-25
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