A CuSe intermediate layer (IL) is prepared between CZTSSe and Mo electrode to decay the carrier recombination on the rear surface of the CZTSSe absorber. The power conversion efficiency (PCE) can be increased from 7.52% to 10.09% by optimizing the thickness of CuSe IL. The increased PCE comes from improvement in filling factor (FF), short-circuit current density (J_SC), and open-circuit voltage (V_OC), and their contribution percent is calculated to be 63.08%, 24.83%, and 12.09%, respectively. It is demonstrated that boosted FF is mainly due to decreased reverse saturation current density (J₀), raised J_SC owing to higher photogenerated current density (J_L), and enhanced V_OC caused by decreased J₀ and higher J_L. The contribution percent of (ideal factor (A), J₀), J_L, R_s, and shunt resistance (R_sh) to increased PCE is calculated to be 60.84%, 27.41%, 10.33%, and 1.42%, respectively. By experimental characterization and SCAPS-1D simulation, it is suggested that decreased J₀ results from the formation of passivation field and high electron potential barrier at the rear surface of CZTSSe due to the addition of suitable thickness CuSe IL, higher J_L from the increase in width of the depletion region of CZTSSe/CdS, lower R_s from decrease in thickness of Mo(S, Se)₂, and bigger R_sh from improved crystal quality of CZTSSe absorber.

在 CZTSSe 和 Mo 电极之间制备 CuSe 中间层 (IL)，以衰减 CZTSSe 吸收体背面的载流子复合。通过优化 CuSe IL 的厚度，功率转换效率（PCE）可以从 7.52% 提高到 10.09%。PCE的增加来自于填充因子（FF）、短路电流密度（J _SC）和开路电压（V _OC）的提高，计算出它们的贡献率分别为63.08%、24.83%和12.09% ， 分别。结果表明，提高的 FF 主要是由于降低了反向饱和电流密度 (J ₀ )，提高了 J _SC由于较高的光生电流密度 (J _L )，以及增强了 V _OC由 J ₀降低和 J _L升高引起。(理想因子(A)、J ₀ )、J _L、R _s和分流电阻(R _sh )对PCE增加的贡献率计算分别为60.84%、27.41%、10.33%和1.42%。通过实验表征和SCAPS-1D模拟，表明由于添加了合适厚度的CuSe IL，在CZTSSe背面形成了钝化场和高电子势垒，从而降低了J ₀ ，增加了更高的J _L在 CZTSSe/CdS 的耗尽区的宽度上，由于Mo(S, Se) _{2的厚度减小，R s降低}, 和更大的 R _sh来自 CZTSSe 吸收体晶体质量的提高。