ABSTRACT

The work proposes a physically accurate quasi-ballistic drain current model valid for Double Gate (DG) MOSFETs in the nanoscale regime. The proposed quasi-ballistic model considers the carrier scattering physics and includes both ballistic and diffusive transport. Based on the concepts of scattering theory, a semi-empirical approach is used to determine the diffusive carrier scattering at the critical channel length as a function of drain bias. A generalised three region scale length model is applied to the proposed device structure with arbitrary dielectric constants and oxide thicknesses to examine the device channel length scaling limits. The significance of Eigen values and the scale length equations applicable for the proposed device structure is discussed. The drain current model essentially captures the key signature effect observed in rigorously scaled short channel devices. Further, the proposed quasi-ballistic model demonstrates its physical aptness and optimal accuracy when compared with other similar recent works. The model results obtained are verified using numerical simulations and are found to exhibit excellent continuity in all regions of the device operation.

摘要

这项工作提出了一种物理上精确的准弹道漏极电流模型，适用于纳米级范围内的双栅极 (DG) MOSFET。拟议的准弹道模型考虑了载流子散射物理学，包括弹道和扩散传输。基于散射理论的概念，半经验方法用于确定临界沟道长度处的扩散载流子散射作为漏极偏置的函数。将广义三区域尺度长度模型应用于所提出的具有任意介电常数和氧化物厚度的器件结构，以检查器件通道长度缩放限制。讨论了本征值的重要性和适用于所提出的设备结构的尺度长度方程。漏极电流模型基本上捕获了在严格缩放的短沟道器件中观察到的关键签名效应。此外，与其他类似的近期作品相比，所提出的准弹道模型展示了其物理适应性和最佳精度。获得的模型结果使用数值模拟进行验证，并发现在设备操作的所有区域都表现出出色的连续性。