A 2-bit double layer design structure with a tricharacteristic multifunction response is presented. The top layer incorporates resistive loop printed on the FR4 dielectric material. The bottom layer is an active multifunction design that comprises dipole elements etched on the F4BME dielectric material. The design employs polarization inversion and switching characteristics between the transmission, reflection, and absorption properties. The binary coded state “0000” furnishes transmission to the dual polarized plane wave around 2 GHz frequency and absorption peak at 4.2 GHz frequency. The fractional bandwidth, calculated at −3-3 dB, of this transmission band is 77%. The binary coded state “1111” furnishes reflection to dual polarized plane wave at low frequencies around 2 GHz and absorbs a higher frequency plane wave with absorption peak at 3.2 GHz. The binary coded states “0101” and “1010” control polarization inversion between the transmission, reflection, and absorption at the same frequencies selected by “0000” and “1111” binary coded states. A prototype of the proposed design structure with 20×2020 \times 20 elements is fabricated. Measurement of the S-parameters shows that the behavior of the prototype can be controlled by dc voltage fed to p-i-n diodes. The measured results affirm the credibility of the proposed design.

中文翻译：

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具有三特性响应的双层多功能选频表面


提出了一种具有三特性多功能响应的2位双层设计结构。顶层包含印刷在 FR4 介电材料上的电阻环路。底层是有源多功能设计，包括蚀刻在 F4BME 介电材料上的偶极元件。该设计采用偏振反转以及透射、反射和吸收特性之间的切换特性。二进制编码状态“0000”提供对 2 GHz 频率附近的双偏振平面波的传输和 4.2 GHz 频率处的吸收峰值。该传输频带的分数带宽（按 −3-3 dB 计算）为 77%。二进制编码态“1111”在2GHz左右的低频处提供对双偏振平面波的反射，并吸收较高频率的平面波，吸收峰值在3.2GHz处。二进制编码状态“0101”和“1010”控制在由“0000”和“1111”二进制编码状态选择的相同频率处的透射、反射和吸收之间的偏振反转。制造了具有 20×2020 × 20 个单元的所提出设计结构的原型。 S 参数的测量表明，原型的行为可以通过馈送到 pin 二极管的直流电压来控制。测量结果证实了所提出设计的可信度。