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Numerical Simulation of n-MoSe2/p-Si Solar Cells by AFORS-HET
Advanced Theory and Simulations ( IF 2.9 ) Pub Date : 2022-04-10 , DOI: 10.1002/adts.202100551
Yuheng Shen 1, 2 , Meng Yu 1, 3 , Ruiming Huang 1, 3 , Qijin Cheng 1, 2
Affiliation  

For a thorough understanding of n-MoSe2/p-Si heterojunction solar cells, the effect of the MoSe2 band gap, the back electrode work function, the density of interface states, as well as the introduction of the interface layer on the performance of MoSe2/Si heterojunction solar cells is systematically investigated via AFORS-HET simulation software. It is shown that a higher MoSe2 band gap, a higher back electrode work function, a lower density of interface states, and an introduction of a thin intrinsic hydrogenated amorphous silicon as an interface layer, are favorable for the achievement of high-performance MoSe2/Si heterojunction solar cells. Through the simulation optimization, a photovoltaic conversion efficiency of 12.31% with an open-circuit voltage of 0.61 V, a short-circuit current density of 26.47 mA cm−2, as well as a fill factor of 75.4%, can be obtained for the n-MoSe2/p-Si heterojunction solar cells. To interpret the obtained simulation results, the authors have carefully analyzed the current–voltage curves, energy band diagrams, electron and hole concentration distributions, electron and hole recombination rates, etc. This study indicates that silicon-based heterojunction solar cells with MoSe2 as an active layer are of great significance in the development of high-efficiency photovoltaic devices.

中文翻译:

AFORS-HET 对 n-MoSe2/p-Si 太阳能电池的数值模拟

为了彻底了解n-MoSe 2 /p-Si异质结太阳能电池,MoSe 2带隙的影响,背电极功函数,界面态密度,以及界面层的引入对性能的影响通过AFORS-HET仿真软件系统地研究了MoSe 2 /Si异质结太阳能电池的性能。结果表明,较高的MoSe 2带隙、较高的背电极功函数、较低的界面态密度以及引入薄的本征氢化非晶硅作为界面层有利于实现高性能MoSe 2/Si异质结太阳能电池。通过仿真优化,光伏转换效率为12.31%,开路电压为0.61 V,短路电流密度为26.47 mA cm -2,填充因子为75.4%。 n-MoSe 2 /p-Si 异质结太阳能电池。为了解释获得的模拟结果,作者仔细分析了电流-电压曲线、能带图、电子和空穴浓度分布、电子和空穴复合率等。这项研究表明,以 MoSe 2作为硅基异质结太阳能电池活性层对开发高效光伏器件具有重要意义。
更新日期:2022-04-10
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