Large-scale growth of transition metal dichalcogenides and their subsequent integration with compound semiconductors is one of the major obstacles for two-dimensional materials implementation in optoelectronics applications such as active matrix displays or optical sensors. Here we present a novel transition metal dichalcogenide-on-compound-semiconductor fabrication method that is compatible with a batch microfabrication process. We show how a thin film of molybdenum disulfide (MoS₂) can be directly synthesized on a gallium-nitride-based epitaxial wafer to form a thin film transistor array. Subsequently, the MoS₂ thin film transistor was monolithically integrated with micro-light-emitting-diode (micro-LED) devices to produce an active matrix micro-LED display. In addition, we demonstrate a simple approach to obtain red and green colours through the printing of quantum dots on a blue micro-LED, which allows for the scalable fabrication of full-colour micro-LED displays. This strategy represents a promising route to attain heterogeneous integration, which is essential for high-performance optoelectronic systems that can incorporate the established semiconductor technology and emerging two-dimensional materials.

过渡金属二硫化物的大规模生长及其随后与化合物半导体的集成是二维材料在有源矩阵显示器或光学传感器等光电应用中实现的主要障碍之一。在这里，我们提出了一种新的过渡金属二硫化物-化合物-半导体制造方法，该方法与批量微制造工艺兼容。我们展示了如何在氮化镓基外延晶片上直接合成二硫化钼 (MoS _{2 ) 薄膜以形成薄膜晶体管阵列。}随后，MoS ₂薄膜晶体管与微型发光二极管 (micro-LED) 器件单片集成，以生产有源矩阵微型 LED 显示器。此外，我们展示了一种通过在蓝色 micro-LED 上打印量子点来获得红色和绿色的简单方法，这允许全彩色 micro-LED 显示器的可扩展制造。该策略代表了实现异质集成的有希望的途径，这对于可以结合已建立的半导体技术和新兴二维材料的高性能光电系统至关重要。