Russian Microelectronics Pub Date : 2022-04-01 , DOI: 10.1134/s106373972201005x A. V. Dunaev 1 , T. A. Zhukova 1
|
Abstract
Gallium arsenide semiconductor wafers placed in a plasma medium of halogen-containing gases are used as a solid-plasma system. In the semiconductor industry, engineering, and technology, the formation of topology on the surface of semiconductors is one of the main operations. Due to the high integral density of modern electronic products, the requirements for the quality of the topological layers formed by the plasma are very high. Currently, halogen-containing gases are most often used as the plasma-forming medium, in particular, mixtures based on Cl2 and spectral control of the etching process is an actual technique in modern electronics. In this paper, we study the survey spectra of plasma-forming gases of chlorine, hydrogen chloride, argon, and hydrogen, as well as the spectral composition of these gases in the presence of a semiconductor wafer of gallium arsenide. Lines and bands are selected for spectral control of the etching process rate. It is shown that the relationship between the radiation intensity of the interaction products and the etching rate is described by a directly proportional relationship, which makes it possible to make an assumption about the possibility of controlling the process by the method of emission spectroscopy.
中文翻译：
发射光谱法作为研究等离子体-固体系统相互作用的一种方法
摘要
将砷化镓半导体晶片置于含卤素气体的等离子体介质中，用作固体等离子体系统。在半导体工业、工程和技术中，在半导体表面形成拓扑是主要操作之一。由于现代电子产品的高集成密度，对等离子体形成的拓扑层的质量要求非常高。目前，最常使用含卤素气体作为等离子体形成介质，特别是基于 Cl 2的混合物蚀刻过程的光谱控制和光谱控制是现代电子学中的一项实际技术。在本文中，我们研究了形成等离子体的氯、氯化氢、氩和氢气体的光谱，以及在砷化镓半导体晶片存在下这些气体的光谱组成。选择线和带用于蚀刻过程速率的光谱控制。结果表明，相互作用产物的辐射强度与刻蚀速率之间的关系用正比关系来描述，这使得可以假设通过发射光谱的方法控制过程的可能性。
京公网安备 11010802027423号