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Molecular Layering of Oxide Nanostructures on the Surface of Metal Matrices
Russian Microelectronics Pub Date : 2022-04-01 , DOI: 10.1134/s1063739722020056
Yu. K. Ezhovsky 1 , S. V. Mikhailovsky 1
Affiliation  

Abstract

The generalized results of studying the processes of the formation of nanolayers of silicon, tantalum, aluminum, and chromium oxides obtained by the method of molecular layering (atomic layer deposition) on the surface of metal matrices—tantalum, aluminum and chromium—are presented. The conditions for the layer mechanism of the formation of oxide nanostructures are determined. Their dielectric characteristics are assessed.



中文翻译:

金属基体表面氧化物纳米结构的分子分层

摘要

介绍了通过分子分层(原子层沉积)的方法在金属基体(钽、铝和铬)表面形成硅、钽、铝和铬氧化物纳米层的过程研究的概括性结果。确定形成氧化物纳米结构的层机制的条件。评估它们的介电特性。

更新日期:2022-04-01
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