Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed storage, and low energy consumption to fulfill the rapid developments of big data, the Internet of Things, and artificial intelligence. Hafnia (HfO₂)-based materials have attracted significant interest due to the advantages of complementary-metal–oxide–semiconductor (CMOS) compatibility, large coercive voltage, and superior ferroelectricity at an ultra-thin thickness. The comparable ferroelectricity to that of traditional perovskite materials and size advantage of HfO₂ result in fascinating storage performance, which can be readily applicable to the fields of integrated non-volatile memories. This Review provides a comprehensive overview of recent developments in HfO₂-based ferroelectrics with attention to the origin of ferroelectricity, performance modulation, and recent achievements in the material. Moreover, potential solutions to existing challenges associated with the materials are discussed in detail, including the wake-up effect, long-term fatigue behavior, and imprint challenges, which pave the way for obtaining HfO₂-based ferroelectric materials and devices with long service life and high stability. Finally, the range of potential applications for these fascinating new materials is presented and summarized, which include non-volatile memories and neuromorphic systems. This Review intends to present the state-of-the-art HfO₂-based ferroelectrics and to highlight the current challenges, possible applications, and future opportunities and can act as an update for recent developments in these intriguing materials and provide guidance for future researchers in the design and optimization of HfO₂-based ferroelectric materials and devices.

中文翻译：

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基于 HfO2 的铁电体：从增强性能、材料设计到应用

由于对小型化、高速存储和低能耗的需求，以满足大数据、物联网和人工智能的快速发展，非易失性存储器的需求量很大。Hafnia (HfO ₂ ) 基材料由于具有互补金属-氧化物-半导体 (CMOS) 兼容性、大矫顽电压和超薄铁电性等优点而引起了人们的极大兴趣。与传统钙钛矿材料相当的铁电性和 HfO ₂的尺寸优势导致了令人惊叹的存储性能，可以很容易地应用于集成非易失性存储器领域。本评论全面概述了 HfO _{2的最新发展}基铁电体，关注铁电体的起源、性能调制和材料的最新成就。此外，还详细讨论了与材料相关的现有挑战的潜在解决方案，包括唤醒效应、长期疲劳行为和印记挑战，为获得长期使用的 HfO ₂基铁电材料和器件铺平了道路寿命和高稳定性。最后，介绍和总结了这些引人入胜的新材料的潜在应用范围，包括非易失性存储器和神经形态系统。本评论旨在介绍最先进的 HfO ₂基铁电体，并强调当前的挑战、可能的应用和未来的机会，可以作为这些有趣材料的最新发展的更新，并为未来研究人员设计和优化 HfO ₂基铁电材料和器件提供指导。