The unidirectional spin Hall and Rashba−Edelstein magnetoresistance is of great fundamental and practical interest, particularly in the context of reading magnetization states in two-terminal spin–orbit torque memory and logic devices due to its unique symmetry. Here, we report large unidirectional spin Hall and Rashba−Edelstein magnetoresistance in a new material family—magnetic insulator/topological insulator Y₃Fe₅O₁₂/Bi₂Se₃ bilayers. Such heterostructures exhibit a unidirectional spin Hall and Rashba−Edelstein magnetoresistance that is about an order of magnitude larger than the highest values reported so far in all-metal Ta/Co bilayers. The polarized neutron reflectometry reveals a unique temperature-dependent magnetic intermediary layer at the magnetic insulator–substrate interface and a proximity layer at the magnetic insulator–topological insulator interface. These polarized neutron reflectometry findings echo the magnetoresistance results in a comprehensive physics picture. Finally, we demonstrate a prototype memory device based on a magnetic insulator/topological insulator bilayer, using unidirectional spin Hall and Rashba−Edelstein magnetoresistance for electrical readout of current-induced magnetization switching aided by a small Oersted field.

中文翻译：

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拓扑绝缘体/磁绝缘体异质结构中的大单向自旋霍尔和 Rashba-Edelstein 磁阻

单向自旋霍尔和 Rashba-Edelstein 磁阻具有重要的基础和实际意义，特别是在读取两端自旋轨道扭矩存储器和逻辑器件中的磁化状态时，由于其独特的对称性。在这里，我们报告了一个新材料族——磁绝缘体/拓扑绝缘体 Y ₃ Fe ₅ O ₁₂ /Bi ₂ Se _{3中的大单向自旋霍尔和 Rashba-Edelstein 磁阻}双层。这种异质结构表现出单向自旋霍尔和 Rashba-Edelstein 磁阻，比迄今为止报道的全金属 Ta/Co 双层中的最高值大约大一个数量级。极化中子反射仪揭示了在磁绝缘体-衬底界面处存在一个独特的与温度相关的磁性中间层，在磁绝缘体-拓扑绝缘体界面处存在一个邻近层。这些极化中子反射测量结果与磁阻结果相呼应，形成了一幅全面的物理图景。最后，我们展示了一种基于磁绝缘体/拓扑绝缘体双层的原型存储设备，使用单向自旋霍尔和 Rashba-Edelstein 磁阻在小奥斯特场的辅助下对电流感应磁化切换进行电读出。