Due to nonideal behavior, current organic thin film transistor technologies lack the proper models for essential characterization and thus suffer from a poorly estimated parameter extraction critical for circuit design and integration. Organic thin film transistors are often plagued by contact resistance, which is often less problematic in inorganic transistors; consequently, common models used for describing inorganic devices do not properly work with organic thin film transistors. In this work, we fabricate poly{[ N, N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} based organic thin film transistors with reduced contact resistance through the introduction of metallic interlayers between the semiconductor and gold contacts. The addition of 10 nm thick manganese interlayer provides optimal organic thin film transistor device performance with the lowest level of contact resistance. Improved organic thin film transistors were characterized using an improved organic virtual-source emission diffusion model, which provides a simple and effective method to extract the critical device parameters. The organic virtual-source emission diffusion model led to nearly perfect prediction using effective gate voltages and a gate dependant contact resistance, providing a significant improvement over common metal–oxide–semiconductor field-effect transistor models such as the Shichman–Hodges model.

中文翻译：

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通过改进的虚拟源发射扩散模型对 N 型有机薄膜晶体管的接触质量进行基准测试

由于行为不理想，目前的有机薄膜晶体管技术缺乏用于基本表征的适当模型，因此难以估计对电路设计和集成至关重要的参数提取。有机薄膜晶体管经常受到接触电阻的困扰，这在无机晶体管中通常没有那么大的问题；因此，用于描述无机器件的通用模型不适用于有机薄膜晶体管。在这项工作中，我们制造了 poly{[ N, N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'- (2,2'-联噻吩)}基有机薄膜晶体管，通过在半导体和金触点之间引入金属夹层降低了接触电阻。添加 10 nm 厚的锰中间层可提供最佳的有机薄膜晶体管器件性能和最低水平的接触电阻。使用改进的有机虚拟源发射扩散模型对改进的有机薄膜晶体管进行了表征，该模型提供了一种提取关键器件参数的简单有效的方法。有机虚拟源发射扩散模型使用有效栅极电压和栅极相关接触电阻进行了近乎完美的预测，与常见的金属氧化物半导体场效应晶体管模型（如 Shichman-Hodges 模型）相比有了显着改进。使用改进的有机虚拟源发射扩散模型对改进的有机薄膜晶体管进行了表征，该模型提供了一种提取关键器件参数的简单有效的方法。有机虚拟源发射扩散模型使用有效栅极电压和栅极相关接触电阻进行了近乎完美的预测，与常见的金属氧化物半导体场效应晶体管模型（如 Shichman-Hodges 模型）相比有了显着改进。使用改进的有机虚拟源发射扩散模型对改进的有机薄膜晶体管进行了表征，该模型提供了一种提取关键器件参数的简单有效的方法。有机虚拟源发射扩散模型使用有效栅极电压和栅极相关接触电阻进行了近乎完美的预测，与常见的金属氧化物半导体场效应晶体管模型（如 Shichman-Hodges 模型）相比有了显着改进。