Silicon Hall-effect sensors have been widely used in industry and research fields due to their straightforward fabrication process and CMOS compatibility. However, as their material property limitations, technicians usually implement complex CMOS circuits to improve the sensors’ performance including temperature drift and offset compensation for fitting tough situation, but it is no doubt that it increases the design complexity and the sensor area. Gallium arsenide (GaAs) is a superior material of Hall-effect device because of its large mobility and stable temperature characteristics. Concerning there is no specified modelling of GaAs Hall-effect device, this paper investigated its modelling by using finite element method (FEM) software Silvaco TCAD^® to help and guide GaAs Hall-effect device fabrication. The modeled sensor has been fabricated and its experimental results are in agreement with the simulation results. Comparing to our previous silicon Hall-effect sensor, the GaAs Hall-effect sensor demonstrates potential and reliable benchmark for the future Hall magnetic sensor developments.

中文翻译：

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宽温度范围 Al0.24Ga0.76As/GaAs 霍尔磁传感器的建模和制造

由于其简单的制造工艺和 CMOS 兼容性，硅霍尔效应传感器已广泛应用于工业和研究领域。然而，由于其材料特性的限制，技术人员通常采用复杂的 CMOS 电路来改善传感器的性能，包括温度漂移和偏移补偿以适应严苛的环境，但这无疑增加了设计复杂性和传感器面积。砷化镓 (GaAs) 具有较大的迁移率和稳定的温度特性，是霍尔效应器件的优良材料。针对GaAs霍尔效应器件没有具体建模的问题，本文采用有限元法（FEM）软件Silvaco TCAD®对其建模进行了研究^。帮助和指导 GaAs 霍尔效应器件的制造。模型化传感器已经制作完成，其实验结果与仿真结果一致。与我们之前的硅霍尔效应传感器相比，GaAs 霍尔效应传感器展示了未来霍尔磁传感器发展的潜力和可靠基准。