Parasitic capacitances associated with overhangs of the T-shape-gate enhancement-mode (E-mode) GaN-based power device, were investigated by frequency/voltage-dependent capacitance–voltage and inductive-load switching measurements. The overhang capacitances induce a pinch-off voltage distinguished from that of the E-mode channel capacitance in the gate capacitance and the gate–drain capacitance characteristic curves. Frequency- and voltage-dependent tests confirm the instability caused by the trapping of interface/bulk states in the LPCVD-SiN _x passivation dielectric. Circuit-level double pulse measurement also reveals its impact on switching transition for power switching applications.

中文翻译：

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T 形栅极增强型 AlGaN/GaN MIS-HEMT 中寄生电容的不稳定性

通过频率/电压相关的电容-电压和电感负载开关测量研究了与 T 形栅极增强模式（E 模式）基于 GaN 的功率器件的悬垂相关的寄生电容。悬垂电容感应夹断电压，区别于栅极电容和栅极 - 漏极电容特性曲线中的 E 模式沟道电容。依赖于频率和电压的测试证实了 LPCVD-SiN 中界面/体态捕获引起的不稳定性 _X 钝化介质。电路级双脉冲测量还揭示了它对电源开关应用的开关转换的影响。