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Strain Engineering of Energy Storage Performance in Relaxor Ferroelectric Thin Film Capacitors
Advanced Theory and Simulations ( IF 2.9 ) Pub Date : 2022-03-16 , DOI: 10.1002/adts.202100324
Shiqi Xu 1, 2 , Xiaoming Shi 1, 2 , Hao Pan 3 , Rongzhen Gao 1, 2 , Jing Wang 1, 2 , Yuanhua Lin 3 , Houbing Huang 1, 2
Affiliation  

Dielectric energy storage capacitors are receiving a great deal of attention owing to their high energy density and fast charging–discharging speed. The current energy storage density of dielectrics is relatively low and cannot meet the requirements of miniaturization of pulsed power equipment. Therefore, increasing the energy storage density of dielectrics has become a research hotspot. Herein, using phase-field simulations to design polymorphic nanodomains, the strain engineering of energy storage performance of binary and ternary solid solution relaxor ferroelectric films is investigated. The results show that the energy storage performance of the ternary film is better than that of the binary film due to the polymorphic nanodomains. In addition, as the film in-plane strain is modified from −2% to 2%, the energy density is improved by 80%, and the efficiency also increases from 52% to 77%. This work proves the remarkable energy storage performance of polymorphic films and provides a theoretical basis to optimize the energy-storage performance of ferroelectric thin-film capacitors by adjusting the misfit strain.

中文翻译:

弛豫铁电薄膜电容器储能性能的应变工程

介电储能电容器因其高能量密度和快速充放电速度而受到广泛关注。目前电介质的储能密度较低,不能满足脉冲电源设备小型化的要求。因此,提高电介质的储能密度成为研究热点。在此,利用相场模拟设计多晶型纳米域,研究了二元和三元固溶体弛豫铁电薄膜储能性能的应变工程。结果表明,由于多晶型纳米域,三元薄膜的储能性能优于二元薄膜。此外,随着薄膜面内应变从-2% 修改为 2%,能量密度提高了 80%,效率也从 52% 提高到 77%。该工作证明了多晶型薄膜具有显着的储能性能,并为通过调整错配应变来优化铁电薄膜电容器的储能性能提供了理论依据。
更新日期:2022-03-16
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