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Solution processed low power organic field-effect transistor bio-chemical sensor of high transconductance efficiency
npj Flexible Electronics ( IF 12.3 ) Pub Date : 2022-03-18 , DOI: 10.1038/s41528-022-00149-9
Wei Tang 1 , Yukun Huang 1 , Yawen Song 1 , Xin Xi 1 , Yuezeng Su 1 , Xiaojun Guo 1 , Ying Fu 2 , Yuanzhe Li 2 , Feng Yan 2 , Yude Yu 3
Affiliation  

Developing organic field-effect transistor (OFET) biosensors for customizable detection of biomarkers for many diseases would provide a low-cost and convenient tool for both biological studies and clinical diagnosis. In this work, design principles of the OFET transducer for biosensors were derived to relate the signal-to-noise ratio (SNR) to the device-performance parameters. Steep subthreshold swing (SS), proper threshold voltage (Vth), good-enough bias-stress stability, and mechanical durability are shown to be the key prerequisites for realizing OFET bio-sensors of high transconductance efficiency (gm/ID) for large SNR. Combining a low trap-density channel and a high-k/low-k gate dielectric layer, low-temperature (<100 °C) solution-processed flexible OFETs can meet the performance requirements to maximize the gm/ID. An extended gate-structure OFET biosensor was further implemented for label-free detection of miR-21, achieving a detection limit below 10 pM with high selectivity at a low operation voltage (<1 V).



中文翻译:

溶液处理的高跨导效率低功率有机场效应晶体管生化传感器

开发有机场效应晶体管 (OFET) 生物传感器可定制检测许多疾病的生物标志物,将为生物学研究和临床诊断提供低成本且方便的工具。在这项工作中,导出了用于生物传感器的 OFET 换能器的设计原则,以将信噪比 ( SNR ) 与设备性能参数联系起来。陡峭的亚阈值摆幅 ( SS )、合适的阈值电压 ( Vth )、足够好的偏置应力稳定性和机械耐久性是实现高跨导效率 ( g m / I D )的 OFET 生物传感器的关键先决条件对于大信噪比. 结合低陷阱密度沟道和高k /低k栅极介电层,低温 (<100 °C) 溶液处理的柔性 OFET 可以满足最大化g m / I D的性能要求。进一步实施了扩展的栅极结构 OFET 生物传感器,用于 miR-21 的无标记检测,在低工作电压 (<1 V) 下实现了低于 10 pM 的检测限和高选择性。

更新日期:2022-03-18
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