With the burgeoning developments in artificial intelligence, hardware implementation of artificial neural network is also gaining pace. In this pursuit, ferroelectric devices (i.e., tunneling junctions and transistors) with voltage thresholds were recently proposed as suitable candidates. However, their development is hindered by the inherent integration issues of inorganic ferroelectrics, as well as poor properties of conventional organic ferroelectrics. In contrast to the conventional ferroelectric synapses, here we demonstrated a two-terminal ferroelectric synaptic device using a molecular ferroelectric (MF)/semiconductor interface. The interfacial resistance can be tuned via the polarization-controlled blocking effect of the semiconductor, owing to the high ferroelectricity and field amplification effect of the MF. Typical synaptic features including spike timing-dependent plasticity are substantiated. The introduction of the semiconductor also enables the attributes of optoelectronic synapse and in-sensor computing with high image recognition accuracies. Such interfaces may pave the way for the hardware implementation of multifunctional neuromorphic devices.

随着人工智能的蓬勃发展，人工神经网络的硬件实现也在加快步伐。在这一追求中，最近提出了具有电压阈值的铁电器件（即隧道结和晶体管）作为合适的候选者。然而，它们的发展受到无机铁电体固有的集成问题以及常规有机铁电体的较差性能的阻碍。与传统的铁电突触相比，我们在这里展示了一种使用分子铁电 (MF)/半导体界面的两端铁电突触装置。由于 MF 的高铁电性和场放大效应，可以通过半导体的极化控制阻挡效应来调节界面电阻。典型的突触特征包括尖峰时间依赖的可塑性得到证实。半导体的引入还实现了光电突触和具有高图像识别精度的传感器内计算的属性。这样的接口可以为多功能神经形态设备的硬件实现铺平道路。