Abstract

Currently, a new generation of high-speed, information-intensive resistive memory based on nonstoichiometric dielectrics is being developed. The electron structure of nonstoichiometric silicon oxide SiO_x is set by the value of parameter x. It is found that the treatment of thermal SiO₂ in hydrogen plasma electron cyclotron resonance leads to the enrichment of silicon oxide with excess silicon, which in turn leads to the appearance of electron and hole traps in SiO_x. SiO_x conductivity is bipolar: electrons are injected from negatively biased silicon and holes are injected from positively biased silicon. Cathodoluminescence (CL) experiments confirm the assumption that the traps in SiO_x are due to the excess silicon. p++-Si(100)/SiO_x/Ni memristor metal-dielectric-semiconductor (MDS) structures are fabricated based on the developed procedure for the preparation of nonstoichiometric oxide in hydrogen plasma of electron cyclotron resonance. Such structures have the properties of resistive switching of SiO_x that do not require a forming operation.

中文翻译：

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电子回旋共振氢等离子体中热 SiO2 处理获得的非化学计量 SiOx 中的电荷传输

摘要

目前，正在开发基于非化学计量电介质的新一代高速、信息密集型电阻存储器。非化学计量氧化硅SiO _x的电子结构由参数x的值设定。研究发现，在氢等离子体电子回旋共振中对热SiO ₂的处理导致氧化硅被过量的硅富集，进而导致SiO _x中出现电子和空穴陷阱。SiO _x导电性是双极的：电子从负偏压的硅注入，空穴从正偏压的硅注入。_{阴极发光 (CL) 实验证实了 SiO x}中的陷阱的假设是由于过量的硅。p ++-Si(100)/SiO _x /Ni 忆阻器金属介电半导体 (MDS) 结构是基于在电子回旋共振氢等离子体中制备非化学计量氧化物的开发程序制造的。这样的结构具有不需要形成操作的SiO _{x的电阻转换特性。}