Electronic states driven by the crystal field in two-dimensional materials: The case of antimonene,Physical Review B

当前位置： X-MOL 学术 › Phys. Rev. B › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Electronic states driven by the crystal field in two-dimensional materials: The case of antimonene
Physical Review B ( IF 3.2 ) Pub Date : 2022-03-04 , DOI: 10.1103/physrevb.105.115404
Tao Lei ₁ , Jin-Mei Li _{2,

3} , Shuai Lu ₁ , Li Wang ₁ , Qiang Yu ₁ , Fang-Sen Li ₁ , Jia-Ou Wang ₃ , Hui-Qiong Wang ₄ , Kurash Ibrahim ₂ , Kai Zhang ₁

Affiliation

The search for novel two-dimensional (2D) giant Rashba semiconductors is a crucial step in the development of spintronic technology. The electronic properties and growth mode of antimonene grown by molecular beam epitaxy were investigated using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy. Results reveal the semiconducting nature of antimonene and the presence of a highly mobile 2D hole gas (2DHG) near the Fermi level. The anisotropy factor and Fermi velocity of the 2DHG are sensitively dependent on the crystal structure and in-plane lattice parameters of antimonene. Antimonene with small lattice parameters exhibits a small anisotropy factor and electron effective mass. Furthermore, the perpendicular (out of plane) electric field breaks the inversion symmetry and, when combined with strong spin-orbit coupling, induces the spin splitting of the valence band of antimonene. ARPES and work function measurements shed light on the band alignment between antimonene and the substrates and confirmed the presence of a nonignorable interface dipole of approximately 0.2 eV. This dipole could be the cause of approximately 80 meV spin splitting at the valence-band maximum of antimonene, a value that is significantly greater than the thermal energy at room temperature. In addition, the spin-splitting degree depends on the interface dipole strength. The gate voltage can generate the out of plane electric field and regulate the spin state similar to an internal electric field. Our results suggest that antimonene and its van der Waals heterostructure system grown on substrates could be used to develop highly efficient spin field-effect transistors and nanospintronic devices.

中文翻译：

二维材料中晶体场驱动的电子态：以锑烯为例

寻找新型二维 (2D) 巨型 Rashba 半导体是自旋电子技术发展的关键一步。使用角分辨光电子能谱（ARPES）和扫描隧道显微镜研究了分子束外延生长的锑烯的电子特性和生长模式。结果揭示了锑烯的半导体性质以及在费米能级附近存在高度移动的二维空穴气体 (2DHG)。2DHG 的各向异性因子和费米速度敏感地依赖于锑烯的晶体结构和面内晶格参数。具有小晶格参数的锑烯表现出小的各向异性因子和电子有效质量。此外，垂直（平面外）电场破坏了反转对称性，并且当与强自旋轨道耦合相结合时，引起锑烯价带的自旋分裂。ARPES 和功函数测量揭示了锑烯和基板之间的能带排列，并证实了大约 0.2 eV 的不可忽略的界面偶极子的存在。这种偶极子可能是锑烯价带最大值处大约 80 meV 自旋分裂的原因，该值明显大于室温下的热能。此外，自旋分裂程度取决于界面偶极子强度。栅极电压可以产生平面外电场并调节自旋状态，类似于内部电场。

更新日期：2022-03-04

点击分享查看原文

点击收藏

阅读更多本刊最新论文本刊介绍/投稿指南11