Ferroelectric hysteresis loop measurement under high driving frequency generally faces great challenges. Parasitic factors in testing circuits such as leakage current and RC delay could result in abnormal hysteresis loops with erroneous remnant polarization (P _r) and coercive field (E _c). In this study, positive-up-negative-down (PUND) measurement under a wide frequency range was performed on a 10-nm thick Hf_0.5Zr_0.5O₂ ferroelectric film. Detailed analysis on the leakage current and RC delay was conducted as the polarization switching occurs in the FE capacitor. After considering the time lag caused by RC delay, reasonable calibration of current response over the voltage pulse stimulus was employed in the integral of polarization current over time. In such a method, rational P–V loops measured at high frequencies (>1 MHz) was successfully achieved. This work provides a comprehensive understanding on the effect of parasitic factors on the polarization switching behavior of FE films.

中文翻译：

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铁电电容器中极化开关测量的频率依赖性

高驱动频率下的铁电磁滞回线测量通常面临着巨大的挑战。测试电路中的寄生因素，如漏电流和 RC 延迟，可能会导致异常磁滞回线和错误的剩余极化（P _r ) 和矫顽场 (乙 _三）。_{在这项研究中，在宽频率范围内对 10 nm 厚的 Hf 0.5} Zr _0.5 O ₂铁电薄膜进行了正上负下 (PUND) 测量。当 FE 电容器发生极化切换时，对漏电流和 RC 延迟进行了详细分析。在考虑RC延迟引起的时滞后，在极化电流随时间的积分中采用了对电压脉冲刺激的电流响应的合理校准。在这样的方法中，理性P-V成功地实现了在高频（> 1 MHz）下测量的环路。这项工作全面了解了寄生因素对 FE 薄膜偏振切换行为的影响。