A new type of vertical nanowire (VNW)/nanosheet (VNS) FETs combining a horizontal channel (HC) with bulk/back-gate electrode configuration, including Bulk-HC and FD-SOI-HC VNWFET, is proposed and investigated by TCAD simulation. Comparisons were carried out between conventional VNWFET and the proposed devices. FD-SOI-HC VNWFET exhibits better I _on/I _off ratio and DIBL than Bulk-HC VNWFET. The impact of channel doping and geometric parameters on the electrical characteristic and body factor (γ) of the devices was investigated. Moreover, threshold voltage modulation by bulk/back-gate bias was implemented and a large γ is achieved for wide range V _th modulation. In addition, results of I _on enhancement and I _off reduction indicate the proposed devices are promising candidates for performance and power optimization of NW/NS circuits by adopting dynamic threshold voltage management. The results of preliminary experimental data are discussed as well.

中文翻译：

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具有用于阈值电压调制的水平通道的垂直纳米线/纳米片 FET

提出了一种新型垂直纳米线 (VNW)/纳米片 (VNS) FET，将水平通道 (HC) 与体/背栅电极配置相结合，包括 Bulk-HC 和 FD-SOI-HC VNWFET，并通过 TCAD 仿真进行了研究. 在传统的 VNWFET 和所提出的器件之间进行了比较。FD-SOI-HC VNWFET表现更好我 _在/我 _关闭比和 DIBL 高于 Bulk-HC VNWFET。沟道掺杂和几何参数对电特性和体因子的影响（γ) 的设备进行了调查。此外，通过体/背栅偏置实现了阈值电压调制，并实现了大γ实现了广泛的范围V _第调制。此外，结果我 _关于增强和我 _关闭减少表明所提出的器件是通过采用动态阈值电压管理来优化 NW/NS 电路的性能和功率的有前途的候选者。还讨论了初步实验数据的结果。