This work is focused on determining the electrical resistance, which is induced by single domain wall (DW) in magnetic nanowire (NW) with a negligible defect. The provided model covers a wide range of NW diameters. The obtained result demonstrates a few-order rapid reduction of the DW resistance accompanied by its possible deviations versus the diameter growth ranging from 1.2nm to 15.2nm. The origin of these deviations, which are also identified as oscillations, is referred to the nonuniform electron scattering on the DW due to the intermixing electron scattering conditions: ballistic for one spin channel and quasi-ballistic for other one with opposite spin direction. It may happen when the DW width by value is approximately in between two lengths: a mean free path (MFP) with the spin down and spin up. The indirect evidence of this finding also comes from the fact that homogeneous NWs show the most valuable DW resistance oscillations by magnitude rather than segmented magnetic NWs. In addition to the approach, where DW width is constant, the other reasonable model is used when the DW can be constrained for some conditions. The same results are valid for magnetic junctions with DW. Finally, resistance simulation in the diffusive range, when a diameter of the NW (or point-like junction) is larger than any of spin-resolved MFP of electrons, successfully follows experimental data for the single and double DW resistances available in literature.

中文翻译：

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点状接触模型的应用：由于平均自由程效应导致的磁性纳米线和结中畴壁的电阻振荡

这项工作的重点是确定由磁性纳米线 (NW) 中的单畴壁 (DW) 引起的电阻，其缺陷可忽略不计。提供的模型涵盖了广泛的 NW 直径。获得的结果表明 DW 电阻的几个数量级快速降低，伴随着其可能的偏差与直径增长范围为 1.2纳米至 15.2纳米。这些偏差的起源，也被称为振荡，是指由于混合电子散射条件在 DW 上的不均匀电子散射：一个自旋通道的弹道和另一个具有相反自旋方向的准弹道。当 DW 宽度值大约介于两个长度之间时，可能会发生这种情况：具有向下旋转和向上旋转的平均自由程 (MFP)。这一发现的间接证据还来自这样一个事实，即均匀的 NW 显示出最有价值的 DW 电阻振荡，而不是分段的磁性 NW。除了 DW 宽度恒定的方法之外，当 DW 可以在某些条件下受到约束时，使用其他合理的模型。相同的结果适用于具有 DW 的磁结。最后，