2D semiconducting transition metal dichalcogenides comprise an emerging class of materials with distinct properties, including large exciton binding energies that reach hundreds of millielectronvolts and valley-contrasting physics. Thanks to the van der Waals interaction, individual monolayers can be assembled to produce synthetic crystals with tailored properties not found in the constituent materials. The interlayer excitons in these structures provide an optically addressable spin and valley degrees of freedom with long lifetime. These quasi-particles can be controlled in solid-state devices to implement (pseudo)spin-based computation schemes or to study fundamental bosonic interactions. In this Review, we discuss recent progress in the field, focusing on device architectures and engineering techniques that allow the properties of interlayer excitons to be tailored, such as electrostatic modulation, relative twist angle, strain and substrate engineering. Because the excitonic response is highly sensitive to the local environment and layer morphology, we also discuss the advances and challenges in the fabrication of excitonic devices. This examination allows us to highlight critical points that require further investigation, as well as to comment on future research perspectives.

二维半导体过渡金属二硫化物是一类新兴的材料，具有不同的特性，包括达到数百毫电子伏特的大激子结合能和谷对比物理。由于范德华相互作用，可以组装单个单层以生产合成晶体，这些晶体具有组成材料中没有的定制特性。这些结构中的层间激子提供了具有长寿命的光学可寻址自旋和谷自由度。这些准粒子可以在固态设备中进行控制，以实现（伪）基于自旋的计算方案或研究基本的玻色子相互作用。在这篇评论中，我们讨论了该领域的最新进展，专注于允许定制层间激子特性的器件架构和工程技术，例如静电调制、相对扭曲角、应变和衬底工程。由于激子响应对局部环境和层形态高度敏感，我们还讨论了激子器件制造的进展和挑战。这项检查使我们能够突出需要进一步调查的关键点，并评论未来的研究前景。