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A 0.45-THz 2-D Scalable Radiator Array With 28.2-dBm EIRP Using an Elliptical Teflon Lens
IEEE Journal of Solid-State Circuits ( IF 4.6 ) Pub Date : 2021-12-08 , DOI: 10.1109/jssc.2021.3130235
Liang Gao 1 , Chi Hou Chan 1
Affiliation  

This article presents a novel coherent, scalable radiator array achieving the highest effective isotropic radiated power (EIRP) and highest dc-to-terahertz (THz) efficiency among silicon-based scalable THz sources beyond 400 GHz through co-design and optimization methods of the THz power generation and radiation. First, a 4 ×\times 4 slot antenna array with silicon substrate loading is optimized for high radiation efficiency and good radiation pattern without silicon lens. A low-cost Teflon lens is introduced and effectively illuminated by the radiator achieving a highly directive beam. Second, a novel 2-D scalable coupled harmonic oscillator array is proposed as the excitation network to feed the antenna array. The oscillator is optimized for the second-harmonic generation to provide high output power and efficiency. The chip is fabricated in a 65-nm CMOS process, and the core area of the chip is 0.55 mm2. The radiated power of −2.4 dBm and 8.8-dBm EIRP are achieved at 449.8 GHz with 373-mW dc power consumption and 0.16% dc-to-THz efficiency under 1.2-V supply voltage. By adding an elliptical Teflon lens, 28.2-dBm EIRP is measured at 452.3 GHz under 1.2-V supply voltage, and a maximum EIRP of 29.1 dBm is measured at 458.3 GHz with 1.4-V supply voltage. By changing the bias and supply voltages, a 4.6% frequency tuning range is achieved. At 452.3 GHz, the measured phase noise is −76.4 dBc/Hz at 1-MHz offset.

中文翻译:


使用椭圆形聚四氟乙烯透镜且具有 28.2dBm EIRP 的 0.45THz 二维可扩展辐射器阵列



本文提出了一种新颖的相干、可扩展辐射器阵列,通过协同设计和优化方法,在超过 400 GHz 的硅基可扩展太赫兹源中实现了最高的有效各向同性辐射功率 (EIRP) 和最高的直流太赫兹 (THz) 效率。太赫兹发电和辐射。首先,对具有硅基板负载的 4 ×\times 4 缝隙天线阵列进行优化,以实现高辐射效率和良好的辐射方向图,无需硅透镜。引入了低成本的聚四氟乙烯透镜,并通过散热器进行有效照明,从而实现高度定向的光束。其次,提出了一种新颖的二维可扩展耦合谐振子阵列作为激励网络来馈送天线阵列。该振荡器针对二次谐波生成进行了优化,以提供高输出功率和效率。该芯片采用65nm CMOS工艺制造,芯片核心面积为0.55mm2。在 1.2V 电源电压下,在 449.8 GHz 频率下实现了 −2.4 dBm 的辐射功率和 8.8 dBm EIRP,直流功耗为 373 mW,直流至太赫兹效率为 0.16%。通过添加椭圆形聚四氟乙烯透镜,在 452.3 GHz、1.2 V 电源电压下测得 28.2 dBm EIRP,在 458.3 GHz、1.4 V 电源电压下测得最大 EIRP 为 29.1 dBm。通过改变偏置和电源电压,可以实现 4.6% 的频率调谐范围。在 452.3 GHz 处,1 MHz 偏移下测得的相位噪声为 −76.4 dBc/Hz。
更新日期:2021-12-08
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