Metal oxide-based electrodes are considered to have a key role in the future production of perovskite solar cells (PSCs). Here, we report a high-quality hole transport material deposited by solution-processed vanadium (V) substituted NiO nanomaterial at room-temperature, which holds better electrical conductivity and hole extraction ability as a reference sample. The smaller crystallite size of vanadium-substituted NiO than that of pristine NiO, decreased the surface roughness and significantly improved the surface wetting of the perovskite film. Therefore, vanadium-substitution improved the quality of the perovskite film. Furthermore, the presence of V⁵⁺ effectively enhanced the electrical conductivity of the NiO film as determined from the photovoltaic properties of the inverted PSC. The increase in electrical conductivity promoted charge transport and reduced interfacial charge accumulation. These enhanced performances and room-temperature deposition method validate the feasibility of the V-incorporated NiO for flexible PSC module with promising efficiency.

基于金属氧化物的电极被认为在钙钛矿太阳能电池（PSC）的未来生产中具有关键作用。在这里，我们报告了一种由溶液处理的钒 (V) 取代的 NiO 纳米材料在室温下沉积的高质量空穴传输材料，它作为参考样品具有更好的导电性和空穴提取能力。钒取代的 NiO 的微晶尺寸小于原始 NiO，降低了表面粗糙度并显着改善了钙钛矿薄膜的表面润湿性。因此，钒替代提高了钙钛矿薄膜的质量。此外，V ^5+的存在根据倒置 PSC 的光伏特性，有效地提高了 NiO 薄膜的导电性。电导率的增加促进了电荷传输并减少了界面电荷积累。这些增强的性能和室温沉积方法验证了掺入 V 的 NiO 用于具有良好效率的柔性 PSC 模块的可行性。