This work presents a high-gain broadband inverter-based cascode transimpedance amplifier fabricated in a 65-nm CMOS process. Multiple bandwidth enhancement techniques, including input bonding wire, input series on-chip inductive peaking and negative capacitance compensation, are adopted to overcome the large off-chip photodiode capacitive loading and the miller capacitance of the input device, achieving an overall bandwidth enhancement ratio of 8.5. The electrical measurement shows TIA achieves 58 dBΩ up to 12.7 GHz with a 180-fF off-chip photodetector. The optical measurement demonstrates a clear open eye of 20 Gb/s. The TIA dissipates 4 mW from a 1.2-V supply voltage.

中文翻译：

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用于光通信的基于反相器的 58-dBΩ 20-Gb/s 共源共栅跨阻放大器

这项工作介绍了一种采用 65 纳米 CMOS 工艺制造的高增益宽带反相器共源共栅跨阻放大器。采用输入键合线、输入串联片内电感峰化和负电容补偿等多种带宽增强技术，克服了片外光电二极管的大容性负载和输入器件的米勒电容，实现了整体带宽增强比为8.5. 电气测量显示，TIA 使用 180-fF 片外光电探测器可在高达 12.7 GHz 时实现 58 dBΩ。光学测量显示 20 Gb/s 的清晰开放眼图。TIA 在 1.2V 电源电压下耗散 4mW。