We demonstrate a high-operating-temperature (HOT) mid-wavelength InAs/GaSb superlattice heterojunction infrared photodetector grown by metal–organic chemical vapor deposition. High crystalline quality and the near-zero lattice mismatch of a InAs/GaSb superlattice on an InAs substrate were evidenced by high-resolution X-ray diffraction. At a bias voltage of –0.1 V and an operating temperature of 200 K, the device exhibited a 50% cutoff wavelength of ~ 4.9 μm, a dark current density of 0.012 A/cm², and a peak specific detectivity of 2.3 × 10⁹ cm·Hz^1/2 /W.

中文翻译：

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基于 MOCVD 生长的 InAs/GaSb 超晶格的高工作温度 MWIR 光电探测器

我们展示了一种通过金属有机化学气相沉积生长的高工作温度 (HOT) 中波长 InAs/GaSb 超晶格异质结红外光电探测器。高分辨率 X 射线衍射证明了 InAs/GaSb 超晶格在 InAs 衬底上的高结晶质量和接近零的晶格失配。在 –0.1 V 的偏置电压和 200 K 的工作温度下，该器件的 50% 截止波长约为 4.9μm，暗电流密度为0.012 A/cm ²，峰比检测率为2.3×10 ⁹ cm·Hz ^1/2 /W。