The design, manufacturing and DC and microwave characterization of high-power Schottky barrier InAlAs/InGaAs back-illuminated mesa structure photodiodes are presented. The photodiodes with 10 and 15 μm mesa diameters operate at ≥40 and 28 GHz, respectively, have the output RF power as high as 58 mW at a frequency of 20 GHz, the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness, and a photodiode dark current as low as 0.04 nA. We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in high-speed analog transmission lines with stringent requirements for phase noise.

中文翻译：

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用于模拟微波信号传输的高功率 InAlAs/InGaAs 肖特基势垒光电二极管

介绍了高功率肖特基势垒 InAlAs/InGaAs 背照式台面结构光电二极管的设计、制造以及直流和微波特性。具有 10 和 15 的光电二极管μm 台面直径分别在≥40 和 28 GHz 下工作，在 20 GHz 的频率下输出射频功率高达 58 mW，直流响应率高达 1.08 A/W，具体取决于吸收层厚度，以及一个光电二极管暗电流低至 0.04 nA。我们表明，这些光电二极管在幅度到相位转换因子方面具有优势，这使得它们适用于对相位噪声有严格要求的高速模拟传输线。